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| 型号： | ESDASC |
| 英文描述： | QUAD TRANSIL ARRAY FOR ESD PROTECTION |
| 中文描述： | 四TRANSIL ESD保护阵列 |
| 文件页数： | 6/9页 |
| 文件大小： | 79K |
| 代理商： | ESDASC |
ESDAxxSC5 / ESDAxxSC6
6/9
TECHNICAL INFORMATION
The ESDA19SC6 is particularly optimized to perform ESD protection. ESD protection is achieved by
clamping the unwanted overvoltage. The clamping voltage is given by the following formula :
VV
R I
CL
BR
dpp
=+
As shown in figure A1, the ESD strikes are clamped by the transient voltage suppressor.
ESD PROTECTION
Circuit board layout is a critical design step in the suppression of ESD induced transients. The following
guidelines are recommended:
s
The ESDA19SC6 should be placed as close as possible to the input terminals or connectors.
s
The path length between the ESD suppressor and the protected line should be minimized.
s
All conductive loops, including power and ground loops should be minimized.
s
The ESD transient return path to ground should be kept as short as possible.
s
Ground planes should be used whenever possible.
ADVICE FOR OPTIMIZING CIRCUIT BOARD LAYOUT
To have a good approximation of the remaining voltages at both VI/O side, we provide the typical
dynamical resistance value Rd. By taking into account the following hypothesis :
Rg > Rd and Rload > Rd
we have:
VOutput
V
R
V
R
BR
d
g
=+
×
The results of the calculation done for Vg = 8 kV, Rg = 330
(IEC61000-4-2 standard), Vbr = 19 V (typ.)
and Rd = 0.80
(typ.) give:
VOuput = 38.4 V
This confirms the very low remaining voltage across the device to be protected. It is also important to note
that in this approximation the parasitic inductance effect was not taken into account. This could be a few
tenths of volts during a few nanoseconds at the output side.
ESD Surge
Voutput
Rload
Rg
Rd
VBR
Vg
Device
to be
protected
ESDA19SC6
Fig. A1: ESD clamping behavior (example)
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相关代理商/技术参数 |
参数描述 |
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| ESDAULC5-1BF4 | 功能描述:TVS DIODE 3VWM 13.5VC 0201 制造商:stmicroelectronics 系列:- 包装:剪切带（CT） 零件状态:有效 类型:齐纳 单向通道:- 双向通道:1 电压 - 反向关态（典型值）:3V 电压 - 击穿（最小值）:5.8V 电压 - 箝位（最大值）@ Ipp:13.5V（标准） 电流 - 峰值脉冲（10/1000μs）:10A（8/20μs） 功率 - 峰值脉冲:140W 电源线路保护:无 应用:通用 不同频率时的电容:- 工作温度:-40°C ~ 150°C（TJ） 安装类型:表面贴装 封装/外壳:0201（0603 公制） 供应商器件封装:201 标准包装:1 |
| ESDAULC6-1U2 | 功能描述:TVS 二极管 - 瞬态电压抑制器 Single-Line Uni ESD 0.8pF 0201 SMD LVL4 RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| ESDAULC6-3BF2 | 功能描述:接口 - 专用 Lo Vltg PNP Pwr Transistor RoHS:否 制造商:Texas Instruments 产品类型:1080p60 Image Sensor Receiver 工作电源电压:1.8 V 电源电流:89 mA 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:BGA-59 |
| ESDAULC6-3BP6 | 功能描述:TVS二极管阵列 N Ch 30V 0.009 Ohm 40A Pwr MOSFET RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C |
| ESDAULC6-8F3 | 功能描述:TVS二极管阵列 8-Line 15kV 1.2 pF 10V VBR 100 IRM RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C |
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