参数资料
| 型号： | EV6R11S6 |
| 厂商： | IXYS |
| 文件页数： | 7/7页 |
| 文件大小： | 0K |
| 描述： | BOARD EVALUATION IX6R11S6 |
| 标准包装： | 1 |
| 主要目的： | 电源管理，半 H 桥驱动器（外部 FET） |
| 已用 IC / 零件： | IX6R11S6 |
| 已供物品： | 板 |
| 相关产品： | IX6R11S6T/R-ND - IC DRVR HALF BRIDGE 4A 18-SOIC IX6R11S6-ND - IC BRIDGE DRIVER FOR N-CH MOSFET |
EV6R11 KIT
With the addition of High Current MOSFET Drivers on the outputs, the IX6R11's typical 6A peak output current
capability can be "boosted" to drive the latest IXYS MOSFETS & IGBTs. Figure 6 shows the addition of two
IXDD414's. These are CMOS high-speed MOSFET drivers that have a 14A Peak Output Drive Capability, allowing
the IX6R11 to drive a pair of IXFK90N20Q 90A/200V Power MOSFETs. The 2 Ohm gate resistors shown should
be Non-Inductive High Performance Film resistors such at those available from Caddock. Particular attention also
needs to be paid to Suppy By-passing, Grounding, and minimizing the Output Lead Inductance when designing such
a high power circuit layout.
Figure 6: Boosting the IX6R11 outputs for larger MOSFETs.
7
DS99102(10/03)
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相关代理商/技术参数 |
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| EV-703210GK | 制造商:Renesas Electronics Corporation 功能描述:DEV HDWR SOCKET GK V850ES/KF1 |
| EV-703239GB64 | 制造商:Renesas Electronics Corporation 功能描述:DEV HDWR SOCKET GB V850ES/FJ2 |
| EV-703239GC100 | 制造商:Renesas Electronics Corporation 功能描述:DEV SOCKET V850ES/FJ2 100 PIN GC |
| EV-703239GJ144 | 制造商:Renesas Electronics Corporation 功能描述:DEV SOCKET GX 144-703239 |
| EV-703239GK80 | 制造商:Renesas Electronics Corporation 功能描述:DEV SOCKET V850ES/FJ2 80 PIN GK |
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