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参数资料
| 型号： | EVAL-ADG884EBZ |
| 厂商： | Analog Devices Inc |
| 文件页数： | 11/16页 |
| 文件大小： | 0K |
| 描述： | BOARD EVAL FOR ADG884 |
| 标准包装： | 1 |
| 系列： | * |
ADG884
Data Sheet
Rev. D | Page 4 of 16
VDD = 3.4 V to 4.2 V; GND = 0 V, unless otherwise noted.
Table 2.
Parameter
25°C
40°C to +85°C
Unit
Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range
0 to VDD
V
On Resistance, RON
0.33
Ω typ
VDD = 3.4 V, VS = 0 V to VDD, IS = 100 mA
0.4
0.47
Ω max
See Figure 18
On-Resistance Match Between Channels, RON
0.013
Ω typ
VDD = 3.4 V, VS = 2 V, IS = 100 mA
0.042
0.065
Ω max
On-Resistance Flatness, RFLAT (On)
0.13
Ω typ
VDD = 3.4 V, VS = 0 V to VDD
0.155
0.175
Ω max
IS = 100 mA
LEAKAGE CURRENTS
VDD = 4.2 V
Source Off Leakage, IS (Off )
±0.2
nA typ
Channel On Leakage, ID, IS (On)
±0.2
nA typ
DIGITAL INPUTS
Input High Voltage, VINH
2.0
V min
Input Low Voltage, VINL
0.8
V max
Input Current, IINL or IINH
0.005
μA typ
VIN = VINL or VINH
±0.1
μA max
Digital Input Capacitance, CIN
2
pF typ
DYNAMIC CHARACTERISTICS1
tON
42
ns typ
RL = 50 Ω, CL = 35 pF
50
54
ns max
tOFF
15
ns typ
RL = 50 Ω, CL = 35 pF
21
24
ns max
Break-Before-Make Time Delay, tBBM
17
ns typ
RL = 50 Ω, CL = 35 pF
10
ns min
Charge Injection
100
pC typ
Off Isolation
60
dB typ
Channel-to-Channel Crosstalk
120
dB typ
S1A to S2A/S1B to S2B, RL = 50 Ω, CL = 5 pF,
f = 100 kHz; see Figure 27
60
dB typ
S1A to S1B/S2A to S2B, RL = 50 Ω, CL = 5 pF,
f = 100 kHz; see Figure 25
Total Harmonic Distortion, THD + N
0.01
% typ
RL = 32 Ω, f = 20 Hz to 20 kHz, VS = 2 V p-p
Insertion Loss
0.03
dB typ
3 dB Bandwidth
18
MHz typ
CS (Off )
110
pF typ
CD, CS (On)
300
pF typ
POWER REQUIREMENTS
VDD = 4.2 V
IDD
0.003
μA typ
Digital inputs = 0 V or 4.2 V
1
μA max
1 Guaranteed by design, not production tested.
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