参数资料
| 型号： | FAN5026MTC |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 15/17页 |
| 文件大小： | 0K |
| 描述： | IC CONTROLLER DDR 28TSSOP |
| 产品变化通告： | Mold Compound Change 30/Nov/2007 |
| 标准包装： | 49 |
| 应用： | 控制器，DDR |
| 输入电压： | 3 V ~ 16 V |
| 输出数： | 2 |
| 输出电压： | 0.9 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 28-TSSOP（0.173"，4.40mm 宽） |
| 供应商设备封装： | 28-TSSOP |
| 包装： | 管件 |
| 其它名称： | FAN5026MTC_NL FAN5026MTC_NL-ND |
V CC ? V SP
?
?
+ R GATE ? ?
? R
t s =
Q G ( SW )
I DRIVER
=
Q G ( SW )
? ?
? DRIVER
(28)
Layout Considerations
Switching converters, even during normal operation,
produce short pulses of current that could cause
substantial ringing and be a source of EMI if layout
Most MOSFET vendors specify Q GD and Q GS. Q G(SW)
can be determined as:
constraints are not observed.
There are two sets of critical components in a DC-DC
Q G ( SW ) = Q GD + Q GS ? Q TH
(29)
converter. The switching power components process
large amounts of energy at high rates and are noise
where Q TH is the gate charge required to get the
MOSFET to it’s threshold (V TH ).
For the high-side MOSFET, V DS = V IN , which can be as
high as 20V in a typical portable application. Care
should be taken to include the delivery of the
MOSFET’s gate power (PGATE ) in calculating the
power dissipation required for the FAN5026:
generators. The low-power components responsible for
bias and feedback functions are sensitive to noise.
A multi-layer printed circuit board is recommended.
Dedicate one solid layer for a ground plane. Dedicate
another solid layer as a power plane and break this
plane into smaller islands of common voltage levels.
Notice all the nodes that are subjected to high-dV/dt
P G ATE = Q G × V CC × f SW
where Q G is the total gate charge to reach V CC .
(30)
voltage swing; such as SW, HDRV, and LDRV. All
surrounding circuitry tends to couple the signals from
these nodes through stray capacitance. Do not oversize
copper traces connected to these nodes. Do not place
traces connected to the feedback components adjacent
Low-Side Losses
Q2, however, switches on or off with its parallel
Schottky diode conducting, therefore V DS ≈ 0.5V. Since
P SW is proportional to V DS , Q2’s switching losses are
negligible and Q2 is selected based on R DS(ON) only.
Conduction losses for Q2 are given by:
to these traces. It is not recommended to use high-
density interconnect systems, or micro-vias, on these
signals. The use of blind or buried vias should be
limited to the low-current signals only. The use of
normal thermal vias is at the discretion of the designer.
Keep the wiring traces from the IC to the MOSFET gate
and source as short as possible and capable of
P COND = ( 1 ? D ) × I OUT 2 × R DS ( ON )
(31)
handling peak currents of 2A. Minimize the area within
the gate-source path to reduce stray inductance and
where R DS(ON) is the R DS(ON) of the MOSFET at the
highest operating junction temperature, and:
eliminate parasitic ringing at the gate.
Locate small critical components, like the soft-start
capacitor and current-sense resistors, as close as
V OUT
D =
V IN
is the minimum duty cycle for the converter.
(32)
possible to the respective pins of the IC.
The FAN5026 utilizes advanced packaging technology
with lead pitch of 0.6mm. High-performance analog
semiconductors utilizing narrow lead spacing may
Since D MIN < 20% for portable computers, (1-D) ≈ 1
produces a conservative result, further simplifying the
calculation.
The maximum power dissipation (P D(MAX) ) is a function of
the maximum allowable die temperature of the low-side
MOSFET; the Θ JA , and the maximum allowable ambient
temperature rise:
require special considerations in design and
manufacturing. It is critical to maintain proper
cleanliness of the area surrounding these devices.
P D ( MAX ) =
T J ( MAX ) ? T A ( MAX )
Θ JA
(33)
Θ JA depends primarily on the amount of PCB area that
can be devoted to heat sinking (see Application Note
AN-1029, Maximum Power Enhancement Techniques
for SO-8 Power MOSFETs for SO-8 MOSFET thermal
information) .
? 2005 Fairchild Semiconductor Corporation
FAN5026 ? Rev. 1.0.8
15
www.fairchildsemi.com
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相关代理商/技术参数 |
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|---|---|
| FAN5026MTC_Q | 功能描述:电流型 PWM 控制器 PFC Controller RoHS:否 制造商:Texas Instruments 开关频率:27 KHz 上升时间: 下降时间: 工作电源电压:6 V to 15 V 工作电源电流:1.5 mA 输出端数量:1 最大工作温度:+ 105 C 安装风格:SMD/SMT 封装 / 箱体:TSSOP-14 |
| FAN5026MTCX | 功能描述:电流型 PWM 控制器 PFC Controller RoHS:否 制造商:Texas Instruments 开关频率:27 KHz 上升时间: 下降时间: 工作电源电压:6 V to 15 V 工作电源电流:1.5 mA 输出端数量:1 最大工作温度:+ 105 C 安装风格:SMD/SMT 封装 / 箱体:TSSOP-14 |
| FAN5029 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:8-Bit Programmable 2- to 5-Phase Synchronous Buck Controller |
| FAN5029 WAF | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FAN5029_07 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:8-Bit Programmable 2- to 5-Phase Synchronous Buck Controller |
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