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参数资料
型号： FCH22N60N
厂商： Fairchild Semiconductor
文件页数： 2/8页
文件大小： 0K
描述： MOSFET N-CH 600V 22A TO-247
标准包装： 150
系列： SupreMOS™
FET 型： MOSFET N 通道，金属氧化物
FET 特点： 标准
漏极至源极电压(Vdss)： 600V
电流 - 连续漏极(Id) @ 25° C： 22A
开态Rds（最大）@ Id, Vgs @ 25° C： 165 毫欧 @ 11A，10V
Id 时的 Vgs(th)（最大）： 4V @ 250µA
闸电荷(Qg) @ Vgs： 45nC @ 10V
输入电容 (Ciss) @ Vds： 1950pF @ 100V
功率 - 最大： 205W
安装类型： 通孔
封装/外壳： TO-247-3
供应商设备封装： TO-247-3
包装： 管件
Package Marking and Ordering Information
Part Number
FCH22N60N
Top Mark
FCH22N60N
Package
TO-247
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
30 units
Electrical Characteristics T C = 25 o C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BV DSS
Δ BV DSS
/ Δ T J
I DSS
I GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
I D = 1 mA, V GS = 0 V,T J = 25 o C
I D = 1 mA, V GS = 0 V, T J = 150 o C
I D = 1 mA, Referenced to 25 o C
V DS = 480 V, V GS = 0 V
V DS = 480 V, T J = 125 o C
V GS = ±50 V, V DS = 0 V
600
650
-
-
-
-
-
-
0.68
-
-
-
-
-
-
10
100
±100
V
V/ o C
μ A
nA
On Characteristics
V GS(th)
R DS(on)
g FS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
V GS = V DS , I D = 250 μ A
V GS = 10 V, I D = 11 A
V DS = 20 V, I D = 11 A
2.0
-
-
3
0.140
22
4.0
0.165
-
V
Ω
S
Dynamic Characteristics
C iss
C oss
C rss
C oss
C oss(eff.)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
V DS = 100 V, V GS = 0 V
f = 1 MHz
V DS = 380 V, V GS = 0 V, f = 1 MHz
V DS = 0 V to 480 V, V GS = 0 V
-
-
-
-
-
1950
75.9
3
43.2
196.4
-
-
-
-
-
pF
pF
pF
pF
pF
Q g(tot)
Q gs
Q gd
ESR
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance (G-S)
V DS = 380 V, I D = 11 A,
V GS = 10 V
f = 1 MHz
(Note 4)
-
-
-
-
45
8.7
14.5
1
-
-
-
-
nC
nC
nC
Ω
Switching Characteristics
t d(on)
t r
t d(off)
t f
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V DD = 380 V, I D = 11 A
R G = 4.7 Ω
(Note 4)
-
-
-
-
16.9
16.7
49
4
-
-
-
-
ns
ns
ns
ns
Drain-Source Diode Characteristics
I S
I SM
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
-
22
66
A
A
V SD
t rr
Q rr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I SD = 11 A
V GS = 0 V, I SD = 11 A
dI F /dt = 100 A/ μ s
-
-
-
-
350
6
1.2
-
-
V
ns
μ C
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. I AS = 7.3 A, R G = 25 Ω , starting T J = 25 ° C.
3. I SD ≤ 22 A, di/dt ≤ 200 A/ μ s, V DD ≤ 380 V, starting T J = 25 ° C.
4. Essentially independent of operating temperature typical characteristics.
?2009 Fairchild Semiconductor Corporation
FCH22N60N Rev. C1
2
www.fairchildsemi.com
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