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参数资料
| 型号： | FCH35N60 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 600V 35A TO-247 |
| 标准包装： | 30 |
| 系列： | SuperMOS™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 600V |
| 电流 - 连续漏极(Id) @ 25° C： | 35A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 98 毫欧 @ 17.5A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 181nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 6640pF @ 25V |
| 功率 - 最大： | 312.5W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-247-3 |
| 供应商设备封装： | TO-247-3 |
| 包装： | 管件 |
December 2013
FCH35N60
N-Channel SuperFET ? MOSFET
600 V, 35 A, 98 m Ω
Features
? 650 V @ T J = 150°C
? Typ.R DS(on) = 79 m Ω
? Ultra Low Gate Charge ( Typ. Q g = 139 nC )
? Low Effective Output Capacitance (Typ. C oss(eff.) = 340 pF)
? 100% Avalanche Tested
Application
Description
SuperFET ? MOSFET is Fairchild Semiconductor ’s first genera-
tion of high voltage super-junction (SJ) MOSFET family that is
utilizing charge balance technology for outstanding low on-
resistance and lower gate charge performance. This technology
is tailored to minimize conduction loss, provide superior switch-
ing performance, dv/dt rate and higher avalanche energy. Con-
sequently, SuperFET MOSFET is very suitable for the switching
power applications such as PFC, server/telecom power, FPD
TV power, ATX power and industrial power applications.
? Solar Inverter
? AC-DC Power Supply
D
G
G
D
S
TO-247
S
MOSFET Maximum Ratings T C = 25 o C unless otherwise noted.
Symbol
V DSS
Drain to Source Voltage
Parameter
FCH35N60
600
Unit
V
V GSS
I D
Gate-Soure voltage
Drain Current
-Continuous (T C = 25 o C)
-Continuous (T C = 100 o C)
±30
35
22.2
V
A
I DM
Drain Current
- Pulsed
(Note 1)
105
A
E AS
I AR
E AR
dv/dt
P D
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T C = 25 o C)
- Derate above 25 o C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
1455
35
31.25
20
312.5
2.5
mJ
A
mJ
V/ns
W
W/ o C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
-55 to +150
300
o
o
C
C
*Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
R θ JC
R θ JA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FCH35N60
0.4
42
Unit
o C/W
?2009 Fairchild Semiconductor Corporation
FCH35N60 Rev. C1
1
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FCH47N60_F133 | MOSFET N-CH 600V 47A TO-247 |
| FCH47N60F_F133 | MOSFET N-CH 600V 47A TO-247 |
| FCH47N60NF | MOSFET N-CH 600V 45.8A TO-247 |
| FCH47N60N | MOSFET N-CH 600V 47A TO-247 |
| FCH76N60NF | MOSFET N-CH 600V 72.8A TO247-3 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FCH47N60 | 功能描述:MOSFET 650V SUPER FET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FCH47N60_06 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:new generation of high voltage MOSFET |
| FCH47N60_07 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:600V N-Channel MOSFET |
| FCH47N60_13 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel SuperFET MOSFET |
| FCH47N60_F085 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N-CH 600V 47A TO-247 |
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