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参数资料
| 型号： | FCH35N60 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 600V 35A TO-247 |
| 标准包装： | 30 |
| 系列： | SuperMOS™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 600V |
| 电流 - 连续漏极(Id) @ 25° C： | 35A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 98 毫欧 @ 17.5A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 181nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 6640pF @ 25V |
| 功率 - 最大： | 312.5W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-247-3 |
| 供应商设备封装： | TO-247-3 |
| 包装： | 管件 |
Package Marking and Ordering Information
Device Marking
FCH35N60
Device
FCH35N60
Package
TO-247
Reel Size
-
Tape Width
-
Quantity
30
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
I D = 250 μ A, Referenced to 25 C
BV DSS
Δ BV DSS
/ Δ T J
BV DS
I DSS
I GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain-Source Avalanche Breakdown
Voltage
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
I D = 250 μ A, V GS = 0 V, T J = 25 o C
I D = 250 μ A, V GS = 0 V, T J = 150 o C
o
V GS = 0 V, I D = 16 A
V DS = 600 V, V GS = 0 V
V DS = 480 V, T C = 125 o C
V GS = ±30 V, V DS = 0 V
600
-
-
-
-
-
-
-
650
0.6
700
-
-
-
-
-
-
-
1
10
±100
V
V
V/ o C
V
μ A
nA
On Characteristics
V GS(th)
R DS(on)
g FS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
V GS = V DS , I D = 250 μ A
V GS = 10 V, I D = 17.5 A
V DS = 40 V, I D = 17.5 A
3.0
-
-
-
0.079
28.8
5.0
0.098
-
V
Ω
S
Dynamic Characteristics
C iss
C oss
C rss
C oss
C oss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
V DS = 25 V, V GS = 0 V
f = 1 MHz
V DS = 480 V, V GS = 0 V, f = 1.0 MHz
V DS = 0 V to 480 V, V GS = 0 V
-
-
-
-
-
4990
2380
140
113
340
6640
3170
-
-
-
pF
pF
pF
pF
pF
Q g
Q gs
Q gd
ESR
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance (G-S)
V DS = 480 V, I D = 35 A
V GS = 10 V
Drain Open, F= 1 MHZ
(Note 4)
-
-
-
-
139
31
69
1.4
181
-
-
-
nC
nC
nC
Ω
Switching Characteristics
t d(on)
t r
t d(off)
t f
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V DD = 300 V, I D = 35 A
R G = 4.7 Ω
(Note 4)
-
-
-
-
34
120
105
73
78
250
220
155
ns
ns
ns
ns
Drain-Source Diode Characteristics
I S
I SM
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
-
35
105
A
A
V SD
t rr
Q rr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I SD = 35 A
V GS = 0 V, I SD = 35 A
dI F /dt = 100 A/ μ s
-
-
-
-
614
16.3
1.4
-
-
V
ns
μ C
Notes:
1: Repetitive Rating: Pulse-width limited by maximum junction temperature.
2: I AS = 17.5 A, V DD = 50 V, R G = 25 Ω , starting T J = 25°C
3: I SD ≤ 35 A, di/dt ≤ 200 A/ μ s, V DD ≤ BV DSS , starting T J = 25°C
4: Essentially independent of operating temperature.
?2009 Fairchild Semiconductor Corporation
FCH35N60 Rev. C1
2
www.fairchildsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FCH47N60 | 功能描述:MOSFET 650V SUPER FET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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