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参数资料
| 型号： | FCI7N60 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 600V 7A I2PAK |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 50 |
| 系列： | SuperFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 600V |
| 电流 - 连续漏极(Id) @ 25° C： | 7A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 600 毫欧 @ 3.5A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 30nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 920pF @ 25V |
| 功率 - 最大： | 83W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-262-3，长引线，I²Pak，TO-262AA |
| 供应商设备封装： | I2PAK |
| 包装： | 管件 |
Package Marking and Ordering Information
Part Number
FCI7N60
Top Mark
FCI7N60
Package
I 2 -PAK
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
50 units
Electrical Characteristics T C = 25 o C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BV DSS
Δ BV DSS
/ Δ T J
BV DS
I DSS
I GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain-Source Avalanche Breakdown
Voltage
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
V GS = 0 V, I D = 250 μ A, T C = 25 o C
V GS = 0 V, I D = 250 μ A, T C = 150 o C
I D = 250 μ A, Referenced to 25 o C
V GS = 0 V, I D = 7 A
V DS = 600 V, V GS = 0 V
V DS = 480 V, T C = 125 o C
V GS = ±30 V, V DS = 0 V
600
-
-
-
-
-
-
-
650
0.6
700
-
-
-
-
-
-
-
1
10
±100
V
V
V/ o C
V
μ A
nA
On Characteristics
V GS(th)
R DS(on)
g FS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
V GS = V DS , I D = 250 μ A
V GS = 10 V, I D = 3.5 A
V DS = 40 V, I D = 3.5 A
3.0
-
-
-
0.53
6
5.0
0.6
-
V
Ω
S
Dynamic Characteristics
C iss
C oss
C rss
C oss
C oss(eff.)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
V DS = 25 V, V GS = 0 V,
f = 1.0 MHz
V DS = 480 V, V GS = 0 V, f = 1 MHz
V DS = 0 V to 400 V, V GS = 0 V
-
-
-
-
-
710
380
34
22
60
920
500
-
29
-
pF
pF
pF
pF
pF
Switching Characteristics
t d(on)
t r
t d(off)
t f
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V DD = 300 V, I D = 7 A,
V GS = 10 V, R G = 25 Ω
(Note 4)
-
-
-
-
35
55
75
32
80
120
160
75
ns
ns
ns
ns
Q g(tot)
Q gs
Q gd
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V DS = 480 V, I D = 7 A,
V GS = 10 V
(Note 4)
-
-
-
23
4.2
11.5
30
5.5
-
nC
nC
nC
Drain-Source Diode Characteristics
I S
I SM
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
-
7
21
A
A
V SD
t rr
Q rr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I SD = 7 A
V GS = 0 V, I SD = 7 A,
dI F /dt = 100 A/ μ s
-
-
-
-
360
4.5
1.4
-
-
V
ns
μ C
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. I AS = 3.5 A, V DD = 50 V, R G = 25 Ω , starting T J = 25 ° C.
3. I SD ≤ 7 A, di/dt ≤ 200 A/ μ s, V DD ≤ BV DSS , starting T J = 25 ° C.
4. Essentially independent of operating temperature typical characteristics.
?2008 Fairchild Semiconductor Corporation
FCI7N60 Rev. C1
2
www.fairchildsemi.com
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