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参数资料
| 型号： | FCP36N60N |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 600V 36A TO-220-3 |
| 标准包装： | 50 |
| 系列： | SupreMOS™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 600V |
| 电流 - 连续漏极(Id) @ 25° C： | 36A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 90 毫欧 @ 18A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 112nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 4785pF @ 100V |
| 功率 - 最大： | 312W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 整包 |
| 供应商设备封装： | TO-220 |
| 包装： | 管件 |
December 2013
FCP36N60N / FCPF36N60NT
N-Channel SupreMOS ? MOSFET
600 V, 36 A, 90 m Ω
Features
? R DS(on) = 81 m Ω (Typ.) @ V GS = 10 V, I D = 18 A
? Ultra Low Gate Charge (Typ. Q g = 86 nC)
? Low Effective Output Capacitance (Typ. C oss(eff.) = 361 pF)
? 100% Avalanche Tested
? RoHS Compliant
Application
Description
The SupreMOS ? MOSFET is Fairchild Semiconductor ’s next
generation of high voltage super-junction (SJ) technology
employing a deep trench filling process that differentiates it from
the conventional SJ MOSFETs. This advanced technology and
precise process control provides lowest Rsp on-resistance,
superior switching performance and ruggedness. SupreMOS
MOSFET is suitable for high frequency switching power con-
verter applications such as PFC, server/telecom power, FPD TV
power, ATX power, and industrial power applications.
? Solar Inverter
? AC-DC Power Supply
D
GD
D
S
TO-220
G
S
TO-220F
G
Absolute Maximum Ratings T C = 25 o C unless otherwise noted.
S
Symbol
V DSS
Drain to Source Voltage
Parameter
FCP36N60N
FCPF36N60NT
600
Unit
V
V GSS
I D
Gate to Source Voltage
Drain Current
- Continuous (T C = 25 o C)
- Continuous (T C = 100 o C)
36
22.7
±30
36*
22.7*
V
A
I DM
Drain Current
- Pulsed
(Note 1)
108
108*
A
E AS
I AR
E AR
dv/dt
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt
Peak Diode Recovery dv/dt
(Note 2)
(Note 1)
(Note 1)
(Note 3)
1800
12
3.12
100
20
mJ
A
mJ
V/ns
P D
Power Dissipation
(T C = 25 o C)
- Derate Above 25 o C
312
2.6
W
W/ o C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8” from Case for 5 Seconds
-55 to +150
300
o
o
C
C
*Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
R θ JC
R θ CS
R θ JA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Case to Heat Sink, Typ.
Thermal Resistance, Junction to Ambient, Max.
FCP36N60N
0.4
0.5
62.5
FCPF36N60NT
3.5
0.5
62.5
Unit
o C/W
?2010 Fairchild Semiconductor Corporation
FCP36N60N / FCPF36N60NT Rev. C2
1
www.fairchildsemi.com
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