- 您现在的位置：买卖IC网 > Datasheet目录413 > FCP4N60 (Fairchild Semiconductor)MOSFET N-CH 600V 3.9A TO-220 Datasheet资料下载
参数资料
| 型号： | FCP4N60 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 600V 3.9A TO-220 |
| 产品目录绘图： | MOSFET TO-220F |
| 标准包装： | 50 |
| 系列： | SuperFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 600V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.9A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 1.2 欧姆 @ 2A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 16.6nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 540pF @ 25V |
| 功率 - 最大： | 50W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220 |
| 包装： | 管件 |
| 产品目录页面： | 1608 (CN2011-ZH PDF) |
December 2013
FC P4 N60
N-Channel SuperFET ? MOSFET
600 V, 3.9 A, 1.2 Ω
Features
? 650 V @ T J = 150°C
? Typ. R DS(on) = 1.0 Ω
? Ultra Low Gate Charge (Typ. Q g = 12.8 nC)
? Low Effective Output Capacitance (Typ. C oss(eff.) = 32 pF)
? 100% Avalanche Tested
? RoHS Compliant
Application
Description
SuperFET ? MOSFET is Fairchild Semiconductor’s first gener-
ation of high voltage super-junction (SJ) MOSFET family that is
utilizing charge balance technology for outstanding low on-
resistance and lower gate charge performance. This technology
is tailored to minimize conduction loss, provide superior switch-
ing performance, dv/dt rate and higher avalanche energy. Con-
sequently, SuperFET MOSFET is very suitable for the switching
power applications such as PFC, server/telecom power, FPD
TV power, ATX power and industrial power applications.
? LCD / LED / PDP TV and Monitor Lighting
? Solar Inverter
? AC-DC Power Supply
D
GD
S
TO-220
G
S
MOSFET Maximum Ratings T C = 25 o C unless otherwise noted.
Symbol
V DSS
Drain-Source Voltage
Parameter
FCP4N60
600
Unit
V
I D
Drain Current
- Continuous (T C = 25 ° C)
- Continuous (T C = 100 ° C)
3.9
2.5
A
A
I DM
V GSS
Drain Current
Gate-Source voltage
- Pulsed
(Note 1)
11.7
± 30
A
V
E AS
I AR
E AR
dv/dt
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 2)
(Note 1)
(Note 1)
(Note 3)
128
3.9
5.0
4.5
mJ
A
mJ
V/ns
P D
Power Dissipation
(T C = 25 ° C)
- Derate A bove 25 ° C
50
0.4
W
W/ ° C
T J, T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8” from Case for 5 Seconds .
-55 to +150
300
° C
° C
Thermal Characteristics
Symbol
Parameter
FC P4 N60
Unit
R θ JC
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
2.5
83
o
C/W
R θ JA
?2008 Fairchild Semiconductor Corporation
FCP4N60 Rev. C1
1
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FCP9N60N | MOSFET N-CH 600V 9A TO220 |
| FCPF11N60F | MOSFET N-CH 600V 11A TO-220F |
| FCPF13N60NT | MOSFET N-CH 600V 13A TO220F |
| FCPF16N60NT | MOSFET N-CH 600V TO-220-3 |
| FCPF16N60 | MOSFET N-CH 600V 16A TO-220F |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FCP50SG | 制造商:ADAM-TECH 制造商全称:Adam Technologies, Inc. 功能描述:.100 IDC BOX HEADER .100" X .100" [2.54 X 2.54] CENTERLINE |
| FCP-50-SG | 功能描述:集管和线壳 50 pos. IDC BOX HEADER .100" RoHS:否 产品种类:1.0MM Rectangular Connectors 产品类型:Headers - Pin Strip 系列:DF50 触点类型:Pin (Male) 节距:1 mm 位置/触点数量:16 排数:1 安装风格:SMD/SMT 安装角:Right 端接类型:Solder 外壳材料:Liquid Crystal Polymer (LCP) 触点材料:Brass 触点电镀:Gold 制造商:Hirose Connector |
| FCP-50-SG-E | 功能描述:集管和线壳 50 pos w/mnting ears IDC BOX HEADER .100" RoHS:否 产品种类:1.0MM Rectangular Connectors 产品类型:Headers - Pin Strip 系列:DF50 触点类型:Pin (Male) 节距:1 mm 位置/触点数量:16 排数:1 安装风格:SMD/SMT 安装角:Right 端接类型:Solder 外壳材料:Liquid Crystal Polymer (LCP) 触点材料:Brass 触点电镀:Gold 制造商:Hirose Connector |
| FCP600-12G | 功能描述:线性和开关式电源 612W 12V 50A 12V 1A RoHS:否 制造商:TDK-Lambda 产品:Switching Supplies 开放式框架/封闭式:Enclosed 输出功率额定值:800 W 输入电压:85 VAC to 265 VAC 输出端数量:1 输出电压（通道 1）:20 V 输出电流（通道 1）:40 A 商用/医用: 输出电压（通道 2）: 输出电流（通道 2）: 安装风格:Rack 长度: 宽度: 高度: |
| FCP600-48 | 制造商:Power-One 功能描述:ACDC - Bulk |
发布紧急采购，3分钟左右您将得到回复。