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参数资料
| 型号： | FDA20N50 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 500V 22A TO-3P |
| 产品目录绘图： | MOSFET TO-3P Pkg |
| 标准包装： | 30 |
| 系列： | UniFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 500V |
| 电流 - 连续漏极(Id) @ 25° C： | 22A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 230 毫欧 @ 11A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 59.5nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 3120pF @ 25V |
| 功率 - 最大： | 280W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-3P-3，SC-65-3 |
| 供应商设备封装： | TO-3P |
| 包装： | 管件 |
Package Marking and Ordering Information
Device Marking
FDA20N50F
Device
FDA20N50F
Package
TO-3PN
Reel Size
Tube
Tape Width
N/A
Quantity
30 units
Electrical Characteristics T C = 25 o C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BV DSS
? BV DSS
/ ? T J
I DSS
I GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
I D = 250 ? A, V GS = 0V, T J = 25 o C
I D = 250 ? A, Referenced to 25 o C
V DS = 500V, V GS = 0V
V DS = 400V, T C = 125 o C
V GS = ±30V, V DS = 0V
500
-
-
-
-
-
0.6
-
-
-
-
-
10
100
±100
V
V/ o C
? A
nA
On Characteristics
V GS(th)
R DS(on)
g FS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
V GS = V DS , I D = 250 ? A
V GS = 10V, I D = 11A
V DS = 40V, I D = 11A
3.0
-
-
-
0.22
24
5.0
0.26
-
V
?
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 25V, V GS = 0V
f = 1MHz
-
-
-
2550
350
27
3390
465
40
pF
pF
pF
Q g(tot)
Q gs
Q gd
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V DS = 400V, I D = 20A
V GS = 10V
(Note 4)
-
-
-
50
14
20
65
-
-
nC
nC
nC
Switching Characteristics
t d(on)
t r
t d(off)
t f
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V DD = 250V, I D = 20A
R G = 25 ?
(Note 4)
-
-
-
-
45
120
100
60
100
250
210
130
ns
ns
ns
ns
Drain-Source Diode Characteristics
I S
I SM
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
-
22
88
A
A
V SD
t rr
Q rr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0V, I SD = 22A
V GS = 0V, I SD = 20A
dI F /dt = 100A/ ? s
-
-
-
-
154
0.5
1.5
-
-
V
ns
?? C
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L = 5mH, I AS = 20A, V DD = 50V, R G = 25 ? , Starting T J = 25°C
3: I SD ?? 22A, di/dt ?? 200A/ ? s, V DD ?? BV DSS , Starting T J = 25°C
4: Essentially Independent of Operating Temperature Typical Characteristics
?2007 Fairchild Semiconductor Corporation
FDA20N50F Rev. C1
2
www.fairchildsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDA20N50_07 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:500V N-Channel MOSFET |
| FDA20N50_0707 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:500V N-Channel MOSFET |
| FDA20N50_12 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:500V N-Channel MOSFET |
| FDA20N50_F109 | 功能描述:MOSFET 500V NCH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDA20N50F | 功能描述:MOSFET 500V N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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