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参数资料
| 型号： | FDB070AN06A0 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 4/12页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 80A TO-263AB |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 80A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 7 毫欧 @ 80A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 66nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 3000pF @ 25V |
| 功率 - 最大： | 175W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | TO-263AB |
| 包装： | 标准包装 |
| 其它名称： | FDB070AN06A0DKR |
Typical Characteristics T C = 25°C unless otherwise noted
1000
500
If R = 0
100
10 μ s
100 μ s
100
t AV = (L)(I AS )/(1.3*RATED BV DSS - V DD )
If R ≠ 0
t AV = (L/R)ln[(I AS *R)/(1.3*RATED BV DSS - V DD ) +1]
1ms
10
OPERATION IN THIS
AREA MAY BE
10ms
STARTING T J = 25 o C
LIMITED BY r DS(ON)
10
DC
1
0.1
SINGLE PULSE
T J = MAX RATED
T C = 25 o C
1
STARTING T J = 150 o C
1
10
100
0.01
0.1
1
10
100
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 5. Forward Bias Safe Operating Area
t AV , TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
160
PULSE DURATION = 80 μ s
160
120
80
DUTY CYCLE = 0.5% MAX
V DD = 15V
120
80
V GS = 10V
V GS = 7V
V GS = 6V
40
T J = 25 o C
40
T C = 25 o C
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
T J = 175 o C
T J =
-55 o C
V GS = 5V
0
4.0
4.5 5.0 5.5 6.0 6.5
7.0
0
0
0.5
1.0
1.5
2.0
16
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Saturation Characteristics
2.5
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
14
2.0
12
V GS = 6V
1.5
10
1.0
8
V GS = 10V
V GS = 10V, I D =80A
6
0.5
0
20
40
6 0
80
-80
-40
0 40 80 120
160
200
I D , DRAIN CURRENT (A)
Figure 9. Drain to Source On Resistance vs Drain
Current
T J , JUNCTION TEMPERATURE ( o C)
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
? 200 3 Fairchild Semiconductor Corporation
FDB070AN06A0 Rev. C2
4
www.fairchildsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDB070AN06A0 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDB070AN06A0_F085 | 功能描述:MOSFET N-CHANNEL POWERTRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDB070AN06A0_Q | 功能描述:MOSFET N-Channel PT 6V 8A 7mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDB075N15A | 功能描述:MOSFET 150V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDB075N15A_F085 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
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