参数资料
型号: FDB3652
厂商: Fairchild Semiconductor
文件页数: 8/13页
文件大小: 0K
描述: MOSFET N-CH 100V 61A TO-263AB
产品培训模块: High Voltage Switches for Power Processing
产品目录绘图: D2PAK, TO-263AB Pkg
MOSFET TO-3P Pkg
MOSFET TO-3P(N)
标准包装: 1
系列: PowerTrench®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 100V
电流 - 连续漏极(Id) @ 25° C: 61A
开态Rds(最大)@ Id, Vgs @ 25° C: 16 毫欧 @ 61A,10V
Id 时的 Vgs(th)(最大): 4V @ 250µA
闸电荷(Qg) @ Vgs: 53nC @ 10V
输入电容 (Ciss) @ Vds: 2880pF @ 25V
功率 - 最大: 150W
安装类型: 表面贴装
封装/外壳: TO-263-3,D²Pak(2 引线+接片),TO-263AB
供应商设备封装: TO-263AB
包装: 标准包装
产品目录页面: 1606 (CN2011-ZH PDF)
其它名称: FDB3652DKR
PSPICE Electrical Model
.SUBCKT FDP3652 2 1 3 rev March 2002
Ca 12 8 1.1e-9
Cb 15 14 1.1e-9
LDRAIN
Cin 6 8 2.8e-9
Dbody 7 5 DbodyMOD
Dbreak 5 11 DbreakMOD
Dplcap 10 5 DplcapMOD
DPLCAP
10
RSLC2
5
RSLC1
51
DBREAK
RLDRAIN
DRAIN
2
Ebreak 11 7 17 18 108.2
5
51
ESLC
11
9
20
Eds 14 8 5 8 1
Egs 13 8 6 8 1
Esg 6 10 6 8 1
Evthres 6 21 19 8 1
Evtemp 20 6 18 22 1
It 8 17 1
GATE
1
LGATE
RLGATE
-
ESG
+
EVTEMP
RGATE + 18 -
22
6
8
6
EVTHRES
+ 19 -
8
50
RDRAIN
16
21
MMED
MSTRO
+
17
EBREAK 18
-
MWEAK
DBODY
Lgate 1 9 7.16e-9
Ldrain 2 5 1.0e-9
Lsource 3 7 2.29e-9
CIN
8
RSOURCE
7
LSOURCE
SOURCE
3
RLSOURCE
RLgate 1 9 71.6
RLdrain 2 5 10
RLsource 3 7 22.9
12
S1A
13
8
S2A
14
13
15
17
RBREAK
18
Mmed 16 6 8 8 MmedMOD
Mstro 16 6 8 8 MstroMOD
Mweak 16 21 8 8 MweakMOD
CA
S1B
13
+
EGS
6
8
S2B
CB
+
EDS
5
8
14
IT
RVTEMP
19
-
VBAT
+
Rbreak 17 18 RbreakMOD 1
Rdrain 50 16 RdrainMOD 5.7e-3
-
-
8
22
Rgate 9 20 1.06
RVTHRES
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
Rsource 8 7 RsourceMOD 6.5e-3
Rvthres 22 8 RvthresMOD 1
Rvtemp 18 19 RvtempMOD 1
S1a 6 12 13 8 S1AMOD
S1b 13 12 13 8 S1BMOD
S2a 6 15 14 13 S2AMOD
S2b 13 15 14 13 S2BMOD
Vbat 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*150),7))}
.MODEL DbodyMOD D (IS=1.5E-11 N=1.06 RS=2.5e-3 TRS1=2.4e-3 TRS2=1.1e-6
+ CJO=1.9e-9 M=5.8e-1 TT=2.5e-8 XTI=3.9)
.MODEL DbreakMOD D (RS=2.7e-1 TRS1=1e-3 TRS2=-8.9e-6)
.MODEL DplcapMOD D (CJO=7e-10 IS=1e-30 N=10 M=0.58)
.MODEL MmedMOD NMOS (VTO=3.6 KP=5.5 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=1.06)
.MODEL MstroMOD NMOS (VTO=4.3 KP=110 IS=1e-30 N=10 TOX=1 L=1u W=1u)
.MODEL MweakMOD NMOS (VTO=3 KP=0.03 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=1.06e1 RS=.1)
.MODEL RbreakMOD RES (TC1=1.05e-3 TC2=1e-6)
.MODEL RdrainMOD RES (TC1=1.7e-2 TC2=3.2e-5)
.MODEL RSLCMOD RES (TC1=1e-3 TC2=1e-7)
.MODEL RsourceMOD RES (TC1=1e-3 TC2=1e-6)
.MODEL RvthresMOD RES (TC1=-5.3e-3 TC2=-1.2e-5)
.MODEL RvtempMOD RES (TC1=-3.3e-3 TC2=1.3e-6)
.MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-8 VOFF=-5)
.MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-5 VOFF=-8)
.MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-1 VOFF=0.5)
.MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=0.5 VOFF=-1)
.ENDS
Note: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options ; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank
Wheatley.
? 2003 Fairchild Semiconductor Corporation
FDP3652 / FDB3652 Rev. C0
8
www.fairchildsemi.com
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