- 您现在的位置：买卖IC网 > PDF目录18463 > FDB3672 (Fairchild Semiconductor)MOSFET N-CH 100V 44A D2PAK PDF资料下载
参数资料
| 型号： | FDB3672 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 4/11页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 44A D2PAK |
| 标准包装： | 800 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 44A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 28 毫欧 @ 44A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 31nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1710pF @ 25V |
| 功率 - 最大： | 120W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D²PAK |
| 包装： | 带卷 (TR) |
Typical Characteristics T C = 25°C unless otherwise noted
200
100
10 μ s
300
100
If R = 0
t AV = (L)(I AS )/(1.3*RATED BV DSS - V DD )
If R ≠ 0
t AV = (L/R)ln[(I AS *R)/(1.3*RATED BV DSS - V DD ) +1]
100 μ s
10
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY r DS(ON)
1ms
10ms
10
STARTING T J = 150 o C
STARTING T J = 25 o C
0.1
SINGLE PULSE
T J = MAX RATED
T C = 25 o C
DC
1
1
10
100
200
0.001
0.01 0.1 1
10
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 5. Forward Bias Safe Operating Area
t AV , TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
80
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V DD = 15V
80
T C = 25 o C
V GS = 10V
V GS = 7V
60
40
T J = 175 o C
60
40
V GS = 6V
PULSE DURATION = 80 μ s
20
0
T J = 25 o C
T J = -55 o C
20
0
DUTY CYCLE = 0.5% MAX
V GS = 5V
3.5
4.0
4.5 5.0 5.5 6.0
6.5
0
0.5
1.0 1.5 2.0 2.5
3.0
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Saturation Characteristics
40
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
2.5
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
35
V GS = 6V
2.0
30
1.5
25
V GS = 10V
1.0
20
V GS = 10V, I D = 44A
15
0.5
0
10
20 30
40
50
-80
-40
0 40 80 120 160
200
I D , DRAIN CURRENT (A)
Figure 9. Drain to Source On Resistance vs Drain
Current
?2009 Fairchild Semiconductor Corporation
T J , JUNCTION TEMPERATURE ( o C)
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
FDB3672_F085 Rev. A
相关PDF资料 |
PDF描述 |
|---|---|
| FXO-HC530-10 | OSC 10 MHZ 3.3V HCMOS SMD |
| PB-12612ZB | SWITCH PUSH SPDT 0.5VA 28V |
| B32520C334K289 | FILM CAP 0.3300UF 10% 63V |
| PB-12611AV2B | SWITCH PUSH SPDT 0.5VA 28V |
| ABLJO-155.520MHZ-T | OSCILLATOR 155.520 MHZ 3.3V SMD |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDB3672_09 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 100V, 44A, 28m?? |
| FDB3672_F085 | 功能描述:MOSFET 100V 44A N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDB3682 | 功能描述:MOSFET 100V N-Channel Pwr Trench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDB-37PF | 制造商:HRS 制造商全称:HRS 功能描述:FD TYPE CONNECTOR FOR RIBBON CABLE |
| FDB-37SF | 制造商:HRS 制造商全称:HRS 功能描述:FD TYPE CONNECTOR FOR RIBBON CABLE |
发布紧急采购，3分钟左右您将得到回复。