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参数资料
| 型号： | FDB6030L |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 48A D2PAK |
| 产品变化通告： | Product Discontinuation 27/Feb/2012 |
| 标准包装： | 800 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 48A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 13 毫欧 @ 26A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 18nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 1250pF @ 15V |
| 功率 - 最大： | 52W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D²PAK |
| 包装： | 带卷 (TR) |
Electrical Characteristics
T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ
Max
Units
Drain-Source Avalanche Ratings (Note 1)
E AS
Single Pulse Drain-Source
V DD = 15 V,
I D = 26 A
100
mJ
Avalanche Energy
I AS
Maximum Drain-Source Avalanche
26
A
Current
Off Characteristics
BV DSS
Drain–Source Breakdown Voltage
V GS = 0 V,
I D = 250 μ A
30
V
? BV DSS
? T J
Breakdown Voltage Temperature
Coefficient
I D = 250 μ A, Referenced to 25 ° C
23
mV/ ° C
I DSS
I GSS
Zero Gate Voltage Drain Current
Gate–Body Leakage
V DS = 24 V,
V GS = ± 20 V,
V GS = 0 V
V DS = 0 V
1
± 100
μ A
nA
On Characteristics
(Note 2)
V GS(th)
Gate Threshold Voltage
V DS = V GS ,
I D = 250 μ A
1
1.9
3
V
? V GS(th)
? T J
Gate Threshold Voltage
Temperature Coefficient
I D = 250 μ A, Referenced to 25 ° C
–5
mV/ ° C
R DS(on)
Static Drain–Source On–
V GS = 10 V,
I D = 26 A
7.9
13
Resistance
V GS = 4.5 V, I D = 21 A
V GS = 10 V, I D = 26 A, T J =125 ° C
10.2
13.0
17
20
m ?
I D(on)
g FS
On–State Drain Current
Forward Transconductance
V GS = 10 V,
V DS = 10V,
V DS = 10 V
I D = 26 A
60
68
A
S
Dynamic Characteristics
C iss
C oss
C rss
R G
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V DS = 15 V,
f = 1.0 MHz
V GS = 15 mV,
V GS = 0 V,
f = 1.0 MHz
1250
330
155
1.3
pF
pF
pF
?
Switching Characteristics
(Note 2)
t d(on)
t r
t d(off)
t f
Q g
Q gs
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
V DD = 15V,
V GS = 10 V,
V DS = 15 V,
V GS = 5 V
I D = 1 A,
R GEN = 6 ?
I D = 26 A,
11
12
29
12
13
3.9
20
22
46
21
18
ns
ns
ns
ns
nC
nC
Q gd
Gate–Drain Charge
5.2
nC
Drain–Source Diode Characteristics and Maximum Ratings
I S
Maximum Continuous Drain–Source Diode Forward Current
48
A
V SD
Drain–Source Diode Forward
Voltage
V GS = 0 V,
I S = 26 A
(Note 1)
0.92
1.3
V
t rr
Q rr
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
I F = 26 A,
d iF /d t = 100 A/μs
26
15
nS
nC
Notes:
1. Calculated continuous current based on maximum allowable junction temperature.
2. Pulse Test: Pulse Width < 300 μ s, Duty Cycle < 2.0%
FDP6030L/FDB6030L Rev E(W)
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