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参数资料
| 型号： | FDB8441_F085 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 40V 80A D2PAK |
| 产品变化通告： | Product Obsolescence 13/Aug/2010 |
| 标准包装： | 800 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 40V |
| 电流 - 连续漏极(Id) @ 25° C： | 80A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 2.5 毫欧 @ 80A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 280nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 15000pF @ 25V |
| 功率 - 最大： | 300W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D²PAK |
| 包装： | 带卷 (TR) |
MOSFET Maximum Ratings T C = 25°C unless otherwise noted
Symbol
V DS
V GS
I D
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (T C = 25 o C, Silicon limited)
Drain Current Continuous (T C = 100 o C, Silicon limited)
Drain Current Continuous (T C = 25 o C, Package limited)
Drain Current Continuous (T A = 25 o C, R θ JA = 43 o C/W)
Pulsed
Ratings
40
±20
262*
185*
120
28
See Figure 4
Units
V
V
A
E AS
P D
Single Pulse Avalanche Energy
Power dissipation
Derate above 25 o C
(Note 1)
947
300
2
mJ
W
W/ o C
T J , T STG
Operating and Storage Temperature
-55 to 175
o
C
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.
Thermal Characteristics
R θ JC
Thermal Resistance Junction to Case
0.5
o C/W
R θ JA
R θ JA
Thermal Resistance Junction to Ambient
Thermal Resistance Junction to Ambient, 1in 2 copper pad area
(Note 2)
62
43
o
o
C/W
C/W
Package Marking and Ordering Information
Device Marking
FDB8441
Device
FDB8441
Package
TO-263AB
Reel Size
330mm
Tape Width
24mm
Quantity
800 units
Electrical Characteristics T J = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B VDSS
Drain to Source Breakdown Voltage
I D = 250 μ A, V GS = 0V
40
-
-
V
I DSS
I GSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V DS = 32V
V GS = 0V
V GS = ±20V
T J = 150°C
-
-
-
-
-
-
1
250
±100
μ A
nA
On Characteristics
V GS(th)
r DS( on)
Gate to Source Threshold Voltage
Drain to Source On Resistance
V DS = V GS , I D = 250 μ A
I D = 80A, V GS = 10V
I D = 80A, V GS = 10V,
T J = 175°C
2
-
-
2.8
1.9
3.3
4
2.5
4.3
V
m Ω
Dynamic Characteristics
C iss
C oss
C rss
R G
Q g(TOT)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
V DS = 25V, V GS = 0V,
f = 1MHz
V GS = 0.5V, f = 1MHz
V GS = 0 to 10V
-
-
-
-
-
15000
1250
685
1.1
215
-
-
-
-
280
pF
pF
pF
Ω
nC
Q g(TH)
Q gs
Q gs2
Q gd
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
V GS = 0 to 2V
V DD = 20V
I D = 35A
I g = 1mA
-
-
-
-
29
60
32
49
38
-
-
-
nC
nC
nC
nC
FDB8441 Rev.A2
2
www.fairchildsemi.com
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