参数资料
型号: FDC602P
厂商: Fairchild Semiconductor
文件页数: 3/5页
文件大小: 0K
描述: MOSFET P-CH 20V 5.5A SSOT-6
产品培训模块: High Voltage Switches for Power Processing
产品变化通告: Mold Compound Change 08/April/2008
产品目录绘图: MOSFET SuperSOT-6
标准包装: 1
系列: PowerTrench®
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 5.5A
开态Rds(最大)@ Id, Vgs @ 25° C: 35 毫欧 @ 5.5A,4.5V
Id 时的 Vgs(th)(最大): 1.5V @ 250µA
闸电荷(Qg) @ Vgs: 20nC @ 4.5V
输入电容 (Ciss) @ Vds: 1456pF @ 10V
功率 - 最大: 800mW
安装类型: 表面贴装
封装/外壳: SOT-23-6 细型,TSOT-23-6
供应商设备封装: 6-SSOT
包装: 标准包装
产品目录页面: 1602 (CN2011-ZH PDF)
其它名称: FDC602PDKR
Typical Characteristics
20
V GS =-4.5V
-3.0V
2
16
-3.5V
-2.5V
1.8
12
8
-2.0V
1.6
1.4
V GS = -2.5V
-3.0V
4
1.2
1
-3.5V
-4.0V
-4.5V
0
0
0.5
1
1.5
2
2.5
3
0.8
-V DS , DRAIN TO SOURCE VOLTAGE (V)
0
5
10
-I D , DRAIN CURRENT (A)
15
20
Figure 1. On-Region Characteristics.
1.6
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.12
1.4
I D = -5.5A
V GS = -4.5V
0.1
I D = -3.0A
0.08
1.2
1
0.06
0.04
T A = 125 o C
0.8
0.6
0.02
0
T A = 25 o C
-50
-25
0
25
50
75
100
125
150
1.5
2
2.5
3
3.5
4
4.5
5
20
T J , JUNCTION TEMPERATURE ( o C)
Figure 3. On-Resistance Variation with
Temperature.
-V GS , GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
16
V DS = -5.0V
T A = -55 o C
125 o C
25 o C
10
1
V GS =-4.5V
T A = 125 o C
12
0.1
25 o C
8
0.01
-55 o C
4
0
0.001
0.0001
0.5
1
1.5
2
2.5
3
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V GS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
-V SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDC602P Rev C(W)
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