参数资料
型号: FDD390N15A
厂商: Fairchild Semiconductor
文件页数: 4/9页
文件大小: 0K
描述: MOSFET N-CH 150V 26A DPAK
标准包装: 1
系列: PowerTrench®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 150V
电流 - 连续漏极(Id) @ 25° C: 26A
开态Rds(最大)@ Id, Vgs @ 25° C: 40 毫欧 @ 26A,10V
Id 时的 Vgs(th)(最大): 4V @ 250µA
闸电荷(Qg) @ Vgs: 18.6nC @ 10V
输入电容 (Ciss) @ Vds: 1285pF @ 75V
功率 - 最大: 63W
安装类型: 表面贴装
封装/外壳: TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装: TO-252-3
包装: 标准包装
其它名称: FDD390N15ADKR
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.10
1.08
1.04
Figure 8. On-Resistance Variation
vs. Temperature
2.6
2.4
2.0
1.6
1.00
1.2
T J , Junction Temperature [ C ]
T J , Junction Temperature [ C ]
0.96
0.92
-80
*Notes:
1. V GS = 0V
2. I D = 250 μ A
-40 0 40 80 120 160
o
0.8
0.4
-80
*Notes:
1. V GS = 10V
2. I D = 26A
-40 0 40 80 120 160
o
Figure 9. Maximum Safe Operating Area
300
100
10 μ s
Figure 10. Maximum Drain Current
vs. Case Temperature
30
V GS = 10V
25
10
100 μ s
20
1
Operation in This Area
is Limited by R DS(on)
1ms
3ms
15
10
*Notes:
1. T C = 25 C
2. T J = 150 C
R θ JC = 2.0 C/W
T C , Case Temperature [ C ]
0.1
0.01
1
DC
o
o
3. Single Pulse
10 100
V DS , Drain-Source Voltage [V]
200
5
0
25
o
50 75 100 125
o
150
Figure 11. Eoss vs. Drain to Source Voltage
Figure 12. Unclamped Inductive
Switching Capability
1.2
1.0
0.8
12
10
If R = 0
t AV = (L) ( I AS ) / ( 1.3*RATED BV DSS -V DD )
If R = 0
t AV = (L/R)In [( I AS *R ) / ( 1.3*RATED BV DSS -V DD ) +1 ]
o
STARTING T J = 25 C
STARTING T J = 150 C
0.6
o
0.4
0.2
0.0
0
30 60 90 120
V DS , Drain to Source Voltage [ V ]
150
1
0.01
0.1 1
t AV , TIME IN AVALANCHE (ms)
10 20
?2011 Fairchild Semiconductor Corporation
FDD390N15A Rev. C3
4
www.fairchildsemi.com
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