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| 型号： | FDD4141 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 40V 10.8A DPAK |
| 产品变化通告： | Dpak Pkg Change 01/Apr/2008 |
| 产品目录绘图： | DPAK, TO-252(AA) |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 40V |
| 电流 - 连续漏极(Id) @ 25° C： | 10.8A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 12.3 毫欧 @ 12.7A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 50nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 2775pF @ 20V |
| 功率 - 最大： | 2.4W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | TO-252 |
| 包装： | 标准包装 |
| 产品目录页面： | 1606 (CN2011-ZH PDF) |
| 其它名称： | FDD4141DKR |
July 2007
FDD4141
P-Channel PowerTrench ? MOSFET
-40V, -50A, 12.3m ?
Features
Max r DS(on) = 12.3m ? at V GS = -10V, I D = -12.7A
Max r DS(on) = 18.0m ? at V GS = -4.5V, I D = -10.4A
High performance trench technology for extremely low r DS(on)
RoHS Compliant
tm
General Description
This P-Channel MOSFET has been produced using Fairchild
Semiconductor’s proprietary PowerTrench ? technology to
deliver low r DS(on) and optimized Bvdss capability to offer
superior performance benefit in the applications. and optimized
switching performance capability reducing power dissipation
losses in converter/inverter applications.
Applications
Inverter
Power Supplies
S
D TO -2 52
G
S
-PA K
(TO -252)
D
G
D
MOSFET Maximum Ratings T C = 25°C unless otherwise noted
Symbol
V DS
V GS
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
T C = 25°C
Ratings
-40
±20
-50
Units
V
V
I D
-Continuous (Silicon limited)
-Continuous
T C = 25°C
T A = 25°C
(Note 1a)
-58
-10.8
A
-Pulsed
-100
E AS
Single Pulse Avalanche Energy
(Note 3)
337
mJ
P D
Power Dissipation
Power Dissipation
T C = 25°C
T A = 25°C
(Note 1a)
69
2.4
W
T J , T STG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
R θ JC
R θ JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1a)
1.8
52
°C/W
Package Marking and Ordering Information
Device Marking
FDD4141
Device
FDD4141
Package
D-PAK (TO-252)
Reel Size
13’’
Tape Width
12mm
Quantity
2500 units
?2007 Fairchild Semiconductor Corporation
FDD4141 Rev.C
1
www.fairchildsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDD4141_10 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:P-Channel PowerTrench?? MOSFET -40V, -50A, 12.3m?? |
| FDD4141_F085 | 功能描述:MOSFET Trans MOS P-Ch 40V 10.8A 3-Pin 2+Tab RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDD4141-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDD4141 Series 40 V 12.3 mOhm P-Channel PowerTrench Mosfet TO-252 |
| FDD4243 | 功能描述:MOSFET 40V P-Channel PowerTrench? MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDD4243_07 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:40V P-Channel PowerTrench㈢ MOSFET |
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