参数资料
型号: FDD4141
厂商: Fairchild Semiconductor
文件页数: 3/6页
文件大小: 0K
描述: MOSFET P-CH 40V 10.8A DPAK
产品变化通告: Dpak Pkg Change 01/Apr/2008
产品目录绘图: DPAK, TO-252(AA)
标准包装: 1
系列: PowerTrench®
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 40V
电流 - 连续漏极(Id) @ 25° C: 10.8A
开态Rds(最大)@ Id, Vgs @ 25° C: 12.3 毫欧 @ 12.7A,10V
Id 时的 Vgs(th)(最大): 3V @ 250µA
闸电荷(Qg) @ Vgs: 50nC @ 10V
输入电容 (Ciss) @ Vds: 2775pF @ 20V
功率 - 最大: 2.4W
安装类型: 表面贴装
封装/外壳: TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装: TO-252
包装: 标准包装
产品目录页面: 1606 (CN2011-ZH PDF)
其它名称: FDD4141DKR
Typical Characteristics T J = 25°C unless otherwise noted
100
80
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5%MAX
4.0
3.5
V GS = -3V
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5%MAX
V GS = -4.5V
3.0
60
40
20
V GS = -10V
V GS = -4V
V GS = -3.5V
2.5
2.0
1.5
1.0
V GS = -3.5V
V GS = -4V
V GS = -4.5V
0
0
1
2
3
V GS = -3V
4
5
0.5
0
20
40 60
V GS = -10V
80
100
-V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
1.8
- I D , DRAIN CURRENT(A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
55
1.6
I D = -12.7A
V GS = -10V
45
I D = -12.7A
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5%MAX
1.4
35
1.2
25
1.0
0.8
15
T J = 125 o C
0.6
-75
-50
-25 0 25 50 75 100 125 150
5
2
4
6
T J = 25 o C
8
10
T J , JUNCTION TEMPERATURE ( o C )
Figure 3. Normalized On- Resistance
vs Junction Temperature
100
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5%MAX
80
V DS = -5V
-V GS , GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
100
V GS = 0V
10
60
40
T J = 150 o C
1
0.1
T J = 150 o C
T J = 25 o C
20
T J = 25 o C
0.01
T J = -55 o C
T J = -55 o C
0
1E-3
1
2
3
4
5
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-V GS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
-V SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
?2007 Fairchild Semiconductor Corporation
FDD4141 Rev.C
3
www.fairchildsemi.com
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