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| 型号： | FDD8782 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 25V 35A DPAK |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品目录绘图： | DPAK, TO-252(AA) |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 25V |
| 电流 - 连续漏极(Id) @ 25° C： | 35A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 11 毫欧 @ 35A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 25nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1220pF @ 13V |
| 功率 - 最大： | 50W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 标准包装 |
| 产品目录页面： | 1605 (CN2011-ZH PDF) |
| 其它名称： | FDD8782DKR |
Electrical Characteristics T J = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B VDSS
Δ B VDSS
Δ T J
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
I D = 250 μ A, V GS = 0V
I D = 250 μ A, referenced to
25°C
25
14.3
V
mV/° C
I DSS
I GSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V DS = 20V,
V GS = 0V
V GS = ±20V
T J = 150 ° C
1
250
±100
μ A
nA
On Characteristics
V GS(th)
Δ V GS(th)
Δ T J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V GS = V DS , I D = 250 μ A
I D = 250 μ A, referenced to
25°C
1.2
1.7
-6.5
2.5
V
mV/°C
V GS = 10V, I D = 35A
8.5
11.0
r DS(on)
Drain to Source On Resistance
V GS = 4.5V, I D = 35A
V GS = 10V, I D = 35A
T J = 175°C
11.0
12.1
14.0
18.0
m Ω
Dynamic Characteristics
C iss
C oss
C rss
R g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V DS = 13V, V GS = 0V,
f = 1MHz
f = 1MHz
920
230
160
1.4
1220
310
240
pF
pF
pF
Ω
Switching Characteristics
t d(on)
t r
t d(off)
t f
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
V DD = 13V, I D = 35A
V GS = 10V, R GS = 9 Ω
7
9
22
14
14
18
36
25
ns
ns
ns
ns
Q g
Q g
Q gs
Q gd
Total Gate Charge
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller”Charge
V GS = 0V to 10V
V GS = 0V to 5V
V DD = 13V
I D = 35A
I g = 1.0mA
18
9.4
3.1
4.0
25
13
nC
nC
nC
nC
Drain-Source Diode Characteristics
V SD
t rr
Q rr
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0V, I S = 35A
V GS = 0V, I S = 15A
I F = 35A, di/dt = 100A/ μ s
I F = 35A, di/dt = 100A/ μ s
0.96
0.86
25
17
1.25
1.2
38
26
V
ns
nC
Notes:
1: Pulse time < 300us,Duty cycle = 2%.
2: Starting T J = 25 o C, L = 1.0mH, I AS = 12A ,V DD = 23V, V GS = 10V.
FDD8782/FDU8782 Rev. A1
2
www.fairchildsemi.com
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