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| 型号： | FDD8876 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | N-Channel PowerTrench MOSFET |
| 中文描述： | 15 A, 30 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封装： | DPAK-3 |
| 文件页数： | 1/11页 |
| 文件大小： | 272K |
| 代理商： | FDD8876 |
2004 Fairchild Semiconductor Corporation
November 2004
FDD8876 / FDU8876 Rev. A2
F
FDD8876 / FDU8876
N-Channel PowerTrench
MOSFET
30V, 73A, 8.2m
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r
DS(ON)
and fast switching speed.
Applications
DC/DC converters
Features
r
DS(ON)
= 8.2m
, V
GS
= 10V, I
D
= 35A
r
DS(ON)
= 10m
, V
GS
= 4.5V, I
D
= 35A
High performance trench technology for extremely low
r
DS(ON)
Low gate charge
High power and current handling capability
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Symbol
V
DSS
V
GS
Parameter
Ratings
30
±
20
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V) (Note 1)
Continuous (T
C
= 25
o
C, V
GS
= 4.5V) (Note 1)
Continuous (T
amb
= 25
o
C, V
GS
= 10V, with R
θ
JA
= 52
o
C/W)
Pulsed
Single Pulse Avalanche Energy (Note 2)
Power dissipation
Derate above 25
o
C
Operating and Storage Temperature
I
D
73
66
15
A
A
A
A
Figure 4
95
70
0.47
-55 to 175
E
AS
mJ
W
W/
o
C
o
C
P
D
T
J
, T
STG
R
θ
JC
R
θ
JA
R
θ
JA
Thermal Resistance Junction to Case TO-252, TO-251
Thermal Resistance Junction to Ambient TO-252, TO-251
Thermal Resistance Junction to Ambient TO-252, 1in
2
copper pad area
2.14
100
52
o
C/W
o
C/W
o
C/W
D
G
S
G D S
I-PAK
(TO-251AA)
G
S
D
D-PAK
(TO-252)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDD8876_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET |
| FDD8876_NL | 功能描述:MOSFET Trans MOS N-Ch 30V 15A 3-Pin 2+Tab RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDD8878 | 功能描述:MOSFET 30V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDD8880 | 功能描述:MOSFET 30V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDD8880_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET 30V, 58A, 9mヘ |
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