参数资料
型号: FDD8878
厂商: FAIRCHILD SEMICONDUCTOR CORP
元件分类: JFETs
英文描述: N-Channel PowerTrench MOSFET
中文描述: 35 A, 30 V, 0.0185 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
封装: DPAK-3
文件页数: 11/12页
文件大小: 240K
代理商: FDD8878
2005 Fairchild Semiconductor Corporation
FDD8878 / FDU8878 Rev. A3
www.fairchildsemi.com
F
11
PSPICE Thermal Model
REV 23 February 2004
FDD8878T
CTHERM1 TH 6 3.5e-4
CTHERM2 6 5 5e-4
CTHERM3 5 4 2.5e-3
CTHERM4 4 3 2.7e-3
CTHERM5 3 2 5e-3
CTHERM6 2 TL 1e-2
RTHERM1 TH 6 2.9e-1
RTHERM2 6 5 3.5e-1
RTHERM3 5 4 4.5e-1
RTHERM4 4 3 5.2e-1
RTHERM5 3 2 6.9e-1
RTHERM6 2 TL 7e-1
SABER Thermal Model
SABER thermal model FDD8878T
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 =3.5e-4
ctherm.ctherm2 6 5 =5e-4
ctherm.ctherm3 5 4 =2.5e-3
ctherm.ctherm4 4 3 =2.7e-3
ctherm.ctherm5 3 2 =5e-3
ctherm.ctherm6 2 tl =1e-2
rtherm.rtherm1 th 6 =2.9e-1
rtherm.rtherm2 6 5 =3.5e-1
rtherm.rtherm3 5 4 =4.5e-1
rtherm.rtherm4 4 3 =5.2e-1
rtherm.rtherm5 3 2 =6.9e-1
rtherm.rtherm6 2 tl =7e-1
}
RTHERM4
RTHERM6
RTHERM5
RTHERM3
RTHERM2
RTHERM1
CTHERM4
CTHERM6
CTHERM5
CTHERM3
CTHERM2
CTHERM1
tl
2
3
4
5
6
th
JUNCTION
CASE
相关PDF资料
PDF描述
FDU8880 N-Channel PowerTrench MOSFET 30V, 58A, 10m
FDU8882 N-Channel PowerTrench MOSFET
FDD8882 N-Channel PowerTrench MOSFET
FDD8882_NL N-Channel PowerTrench MOSFET
FDU8882_NL N-Channel PowerTrench MOSFET
相关代理商/技术参数
参数描述
FDD8880 功能描述:MOSFET 30V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDD8880_08 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET 30V, 58A, 9mヘ
FDD8880_F054 制造商:Fairchild Semiconductor Corporation 功能描述:
FDD8880_G 制造商:Fairchild Semiconductor Corporation 功能描述:30V N-Channel PowerTrench? MOSFET
FDD8880_NL 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: