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参数资料
| 型号： | FDD8882_NL |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | N-Channel PowerTrench MOSFET |
| 中文描述： | 35 A, 30 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封装： | LEAD FREE, DPAK-3 |
| 文件页数： | 11/12页 |
| 文件大小： | 277K |
| 代理商： | FDD8882_NL |
FDD8882/FDU8882 Rev. 1.0.0
www.fairchildsemi.com
F
11
PSPICE Thermal Model
REV 23 October 2004
FDD8882T
CTHERM1 TH 6 5.6e-4
CTHERM2 6 5 6.8e-4
CTHERM3 5 4 2.0e-3
CTHERM4 4 3 2.8e-3
CTHERM5 3 2 5.7e-3
CTHERM6 2 TL 5.8e-3
RTHERM1 TH 6 5.3e-2
RTHERM2 6 5 2.2e-1
RTHERM3 5 4 2.9e-1
RTHERM4 4 3 3.9e-1
RTHERM5 3 2 6.0e-1
RTHERM6 2 TL 6.6e-1
SABER Thermal Model
SABER thermal model FDD8882T
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 =5.6e-4
ctherm.ctherm2 6 5 =6.8e-4
ctherm.ctherm3 5 4 =2.0e-3
ctherm.ctherm4 4 3 =2.8e-3
ctherm.ctherm5 3 2 =5.7e-3
ctherm.ctherm6 2 tl =5.8e-3
rtherm.rtherm1 th 6 =5.3e-2
rtherm.rtherm2 6 5 =2.2e-1
rtherm.rtherm3 5 4 =2.9e-1
rtherm.rtherm4 4 3 =3.9e-1
rtherm.rtherm5 3 2 =6.0e-1
rtherm.rtherm6 2 tl =6.6e-1
}
RTHERM4
RTHERM6
RTHERM5
RTHERM3
RTHERM2
RTHERM1
CTHERM4
CTHERM6
CTHERM5
CTHERM3
CTHERM2
CTHERM1
tl
2
3
4
5
6
th
JUNCTION
CASE
相关PDF资料 |
PDF描述 |
|---|---|
| FDU8882_NL | N-Channel PowerTrench MOSFET |
| FDU8896 | N-Channel PowerTrench MOSFET |
| FDD8896 | N-Channel PowerTrench MOSFET |
| FDV301N | Digital FET , N-Channel |
| FDV302 | Digital FET, P-Channel |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDD8896 | 功能描述:MOSFET 30V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDD8896_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET |
| FDD8896_12 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 30V, 94A, 5.7m?? |
| FDD8896_F085 | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDD8896_G | 制造商:Fairchild Semiconductor Corporation 功能描述:N-Channel Power Trench MOSFET 30V,94A, 5.7m |
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