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参数资料
| 型号： | FDV302 |
| 厂商： | Fairchild Semiconductor Corporation |
| 英文描述： | Digital FET, P-Channel |
| 中文描述： | 数字场效应管，P沟道 |
| 文件页数： | 1/4页 |
| 文件大小： | 63K |
| 代理商： | FDV302 |
October 1997
FDV302P
Digital FET,
P-Channel
General Description Features
Absolute Maximum Ratings
T
A
= 25
o
C unless otherwise noted
Symbol
Parameter
FDV302P
Units
V
DSS
Drain-Source Voltage
-25
V
V
GSS
I
D
Gate-Source Voltage
-8
V
Drain Current
- Continuous
-0.12
A
- Pulsed
-0.5
P
D
Maximum Power Dissipation
0.35
W
T
J
,T
STG
ESD
Operating and Storage Temperature Range
-55 to 150
°C
Electrostatic Discharge Rating MIL-STD-883D
Human Body Model (100pf / 1500 Ohm)
6.0
kV
THERMAL CHARACTERISTICS
R
θ
JA
Thermal Resistance, Junction-to-Ambient
357
°C/W
FDV302P REV. F
-25 V, -0.12 A continuous, -0.5 A Peak.
R
DS(ON)
= 13
@ V
GS
= -2.7 V
R
DS(ON)
= 10
@ V
GS
= -4.5 V.
Very low level gate drive requirements allowing direct
operation in 3V circuits. V
GS(th)
< 1.5V.
Gate-Source Zener for ESD ruggedness.
>6kV Human Body Model
Compact industry standard SOT-23 surface mount
package.
Replace many PNP digital transistors (DTCx and DCDx)
with one DMOS FET.
This P-Channel logic level enhancement mode field effect
transistor is produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance. This
device has been designed especially for low voltage
applications as a replacement for digital transistors. Since
bias resistors are not required, this one P-channel FET can
replace several digital transistors with different bias resistors
such as the DTCx and DCDx series.
Mark:302
S
D
G
SOT-23
SuperSOT
TM
-8
SOIC-16
SO-8
SOT-223
SuperSOT
TM
-6
1997 Fairchild Semiconductor Corporation
相关PDF资料 |
PDF描述 |
|---|---|
| FDV302P | Digital FET, P-Channel |
| FDV303 | Digital FET, N-Channel |
| FDV303N | Digital FET, N-Channel |
| FDV304 | Digital FET, P-Channel |
| FDV304P | Digital FET, P-Channel |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDV302P | 功能描述:MOSFET Digital FET P-Ch RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDV302P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P DIGITAL SOT-23 |
| FDV302P_D87Z | 功能描述:MOSFET Digital FET P-Ch RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDV302P_NB8V001 | 功能描述:MOSFET Digital FET P-Ch RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDV302P_Q | 功能描述:MOSFET Digital FET P-Ch RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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