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参数资料
| 型号： | FDV302 |
| 厂商： | Fairchild Semiconductor Corporation |
| 英文描述： | Digital FET, P-Channel |
| 中文描述： | 数字场效应管，P沟道 |
| 文件页数： | 2/4页 |
| 文件大小： | 63K |
| 代理商： | FDV302 |
Electrical Characteristics
(T
A
= 25
O
C unless otherwise noted )
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
BV
DSS
/
T
J
I
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= -250 μA
I
D
= -250 μA, Referenced to 25
o
C
-25
V
Breakdown Voltage Temp. Coefficient
-20
mV /
o
C
Zero Gate Voltage Drain Current
V
DS
= -20 V, V
GS
= 0 V
-1
μA
T
J
= 55°C
-10
μA
I
GSS
ON CHARACTERISTICS
(Note)
V
GS(th)
/
T
J
V
GS(th)
Gate Threshold Voltage
R
DS(ON)
Static Drain-Source On-Resistance
Gate - Body Leakage Current
V
GS
= -8 V, V
DS
= 0 V
-100
nA
Gate Threshold Voltage Temp. Coefficient
I
D
= -250 μA, Referenced to 25
o
C
1.9
mV /
o
C
V
DS
= V
GS
, I
D
= -250 μA
V
GS
= -2.7 V, I
D
= -0.05 A
V
GS
= -4.5 V, I
D
= -0.2 A
-0.65
-1
-1.5
V
10.6
13
7.9
10
T
J
=125°C
12
18
I
D(ON)
g
FS
DYNAMIC CHARACTERISTICS
On-State Drain Current
V
GS
= -2.7 V, V
DS
= -5 V
V
DS
= -5 V, I
D
= -0.2 A
-0.05
A
Forward Transconductance
0.135
S
C
iss
C
oss
C
rss
SWITCHING CHARACTERISTICS
(Note)
Input Capacitance
V
= -10 V, V
GS
= 0 V,
f = 1.0 MHz
11
pF
Output Capacitance
7
pF
Reverse Transfer Capacitance
1.4
pF
t
D(on)
t
r
t
D(off)
t
f
Q
g
Q
gs
Q
gd
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Turn - On Delay Time
V
DD
= -6 V, I
D
= -0.2 A,
V
GS
= -4.5 V, R
GEN
= 50
5
12
ns
Turn - On Rise Time
8
16
ns
Turn - Off Delay Time
9
18
ns
Turn - Off Fall Time
5
10
ns
Total Gate Charge
V
DS
= -5 V, I
D
= -0.2 A,
V
GS
= -4.5 V
0.22
0.31
nC
Gate-Source Charge
0.11
nC
Gate-Drain Charge
0.04
nC
I
S
V
SD
Maximum Continuous Drain-Source Diode Forward Current
-0.2
A
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= -0.2 A
(Note)
-1
-1.5
V
Note:
Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
FDV302P REV. F
相关PDF资料 |
PDF描述 |
|---|---|
| FDV302P | Digital FET, P-Channel |
| FDV303 | Digital FET, N-Channel |
| FDV303N | Digital FET, N-Channel |
| FDV304 | Digital FET, P-Channel |
| FDV304P | Digital FET, P-Channel |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDV302P | 功能描述:MOSFET Digital FET P-Ch RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDV302P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P DIGITAL SOT-23 |
| FDV302P_D87Z | 功能描述:MOSFET Digital FET P-Ch RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDV302P_NB8V001 | 功能描述:MOSFET Digital FET P-Ch RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDV302P_Q | 功能描述:MOSFET Digital FET P-Ch RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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