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| 型号： | FDG313N |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 25V 0.95A SC70-6 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Mold Compound Change 12/Dec/2007 Mold Compound Change 07/May/2008 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 25V |
| 电流 - 连续漏极(Id) @ 25° C： | 950mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 450 毫欧 @ 500mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 2.3nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 50pF @ 10V |
| 功率 - 最大： | 480mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSSOP，SC-88，SOT-363 |
| 供应商设备封装： | SC-70-6 |
| 包装： | 标准包装 |
| 其它名称： | FDG313NFSDKR |
July 2000
FDG313N
Digital FET, N-Channel
General Description
Features
This N-Channel enhancement mode field effect
transistor is produced using Fairchild's proprietary, high
cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state
resistance. This device has been designed especially
for low voltage applications as a replacement for
bipolar digital transistor and small signal MOSFET.
Applications
? Load switch
? Battery protection
? Power management
?
?
?
?
?
0.95 A, 25 V. R DS(on) = 0.45 ? @ V GS = 4.5 V
R DS(on) = 0.60 ? @ V GS = 2.7 V.
Low gate charge (1.64 nC typical)
Very low level gate drive requirements allowing direct
operation in 3V circuits (V GS(th) < 1.5V).
Gate-Source Zener for ESD ruggedness
(>6kV Human Body Model).
Compact industry standard SC70-6 surface mount
package.
D
S
1
6
D
2
5
SC70-6
pin 1
D
D
G
3
4
Absolute Maximum Ratings
T A = 25°C unless otherwise noted
Symbol
V DSS
V GSS
Drain-Source Voltage
Gate-Source Voltage
Parameter
FDG313N
25
± 8
Units
V
V
I D
Drain Current
- Continuous
(Note 1a)
0.95
A
- Pulsed
2
P D
Power Dissipation for Single Operation
(Note 1a)
0.75
W
(Note 1b)
(Note 1c)
0.55
0.48
T J , T stg
ESD
Operating and Storage Junction Temperature Range
Electrostatic Discharge Rating MIL-STD-883D
-55 to +150
6
° C
kV
Human Body Model (100pf / 1500 Ohm)
Thermal Characteristics
R θ JA
Thermal Resistance, Junction-to-Ambient
(Note 1c)
260
° C/W
Package Outlines and Ordering Information
Device Marking
. 13
Device
FDG313N
Reel Size
7’’
Tape Width
8mm
Quantity
3000 units
? 1998 Fairchild Semiconductor Corporation
FDG313N Rev. C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDG313N | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDG313N_D87Z | 功能描述:MOSFET SC70-6 N-CH 25V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDG314P | 功能描述:MOSFET SC70-6 P-CH -25V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDG314P_Q | 功能描述:MOSFET SC70-6 P-CH -25V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDG315 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel Logic Level PowerTrench MOSFET |
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