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参数资料
| 型号： | FDG6303N_NL |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | Dual N-Channel Digital FET |
| 中文描述： | 500 mA, 25 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SC-70, 6 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 414K |
| 代理商： | FDG6303N_NL |
September 2001
FDG6303N
Dual N-Channel, Digital FET
General Description
Features
* The pinouts are symmetrical; pin 1 and 4 are interchangeable.
Units inside the carrier can be of either orientation and will not affect the functionality of the device.
Absolute Maximum Ratings T
A = 25°C unless otherwise noted
Symbol
Parameter
FDG6303N
Units
V
DSS
Drain-Source Voltage
25
V
GSS
Gate-Source Voltage
V
I
D
Drain/Output Current
- Continuous
0.5
A
- Pulsed
1.5
P
D
Maximum Power Dissipation
(Note 1)
0.3
W
T
J,TSTG
Operating and Storage Temperature Range
-55 to 150
°C
ESD
Electrostatic Discharge Rating MIL-STD-883D
Human Body Model (100 pF / 1500
)
6.0
kV
THERMAL CHARACTERISTICS
RθJA
Thermal Resistance, Junction-to-Ambient
415
°C/W
FDG6303N Rev.F
25 V, 0.50 A continuous, 1.5 A peak.
R
DS(ON) = 0.45 @ VGS= 4.5 V,
R
DS(ON) =0.60 @ VGS= 2.7 V.
Very low level gate drive requirements allowing direct
operation in 3 V circuits (V
GS(th) < 1.5 V).
Gate-Source Zener for ESD ruggedness
(>6kV Human Body Model).
Compact industry standard SC70-6 surface
mount package.
These dual N-Channel logic level enhancement mode
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This
very high density process is especially tailored to
minimize on-state resistance. This device has been
designed especially for low voltage applications as a
replacement for bipolar digital transistors and small
signal MOSFETs.
SOT-23
SuperSOTTM-8
SO-8
SOT-223
SC70-6
SuperSOTTM-6
1 or 4
*
6 or 3
5 or 2
4 or 1
*
2 or 5
3 or 6
SC70-6
G1
D2
S1
D1
S2
G2
.03
- 0.5 to +8
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDG6304 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual P-Channel, Digital FET |
| FDG6304P | 功能描述:MOSFET SC70-6 P-CH -25V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDG6304P_D87Z | 功能描述:MOSFET SC70-6 P-CH -25V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDG6304P_Q | 功能描述:MOSFET SC70-6 P-CH -25V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDG6304PD87Z | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | MATCHED PAIR | P-CHANNEL | 25V V(BR)DSS | TSOP |
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