- 您现在的位置：买卖IC网 > PDF目录296001 > FDG6303N_NL (FAIRCHILD SEMICONDUCTOR CORP) Dual N-Channel Digital FET PDF资料下载
参数资料
| 型号： | FDG6303N_NL |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | Dual N-Channel Digital FET |
| 中文描述： | 500 mA, 25 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SC-70, 6 PIN |
| 文件页数： | 4/5页 |
| 文件大小： | 414K |
| 代理商： | FDG6303N_NL |
FDG6303N Rev.F
Figure 10. Single Pulse Maximum Power
Dissipation.
Figure 8. Capacitance Characteristics.
Figure 7. Gate Charge Characteristics.
Figure 9. Maximum Safe Operating Area.
Typical Electrical Characteristics (continued)
0.1
1
2
5
10
25
40
0.01
0.02
0.05
0.1
0.2
0.5
1
3
V
, DRAI N-SOURCE VOLTAGE (V)
I
,
DRAIN
CURRENT
(A)
DS
D
DC
1s
100ms
10s
RDS(ON)
LIMIT
V
= 4.5V
SINGLE PULSE
R
= 415 °C/W
T = 25°C
GS
A
θJA
10ms
1ms
0.0001
0.001
0.01
0.1
1
10
100
200
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
t , TIME (sec)
TRANSIENT
THERMAL
RESISTANCE
r(t),
NORMALIZED
EFFECTIVE
1
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t / t
1
2
T - T
= P * R
(t)
A
J
P(pk)
t1
t 2
θJA
R
(t) = r(t) * R
R
=415
°C/W
θJA
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in note 1.
Transient thermal response will change depending on the circuit board design.
0.1
0.3
1
2
5
10
25
3
10
30
70
200
V
, DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE
(pF)
DS
Ciss
f = 1 MHz
V
= 0V
GS
Coss
Crss
0.0001
0.001
0.01
0.1
1
10
200
0
10
20
30
40
50
SINGLE PULSE TIME (SEC)
POWER
(W)
SINGLE PULSE
R
=415°C/W
T = 25°C
θJA
A
0
0.4
0.8
1.2
1.6
2
0
1
2
3
4
5
Q
, GATE CHARGE (nC)
V
,
GATE-SOURCE
VOLTAGE
(V)
g
GS
I = 0.5A
D
10V
15V
V
= 5V
DS
相关PDF资料 |
PDF描述 |
|---|---|
| FDH300_NL | High Conductance Low Leakage Diode |
| FDH400TR_NL | High Voltage General Purpose Diode |
| FDH400TR | High Voltage General Purpose Diode; Package: DO-35; No of Pins: 2; Container: Tape & Reel |
| FDH400_T50R | High Voltage General Purpose Diode |
| FDH400_T50A | High Voltage General Purpose Diode |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDG6304 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual P-Channel, Digital FET |
| FDG6304P | 功能描述:MOSFET SC70-6 P-CH -25V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDG6304P_D87Z | 功能描述:MOSFET SC70-6 P-CH -25V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDG6304P_Q | 功能描述:MOSFET SC70-6 P-CH -25V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDG6304PD87Z | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | MATCHED PAIR | P-CHANNEL | 25V V(BR)DSS | TSOP |
发布紧急采购，3分钟左右您将得到回复。