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参数资料
| 型号： | FDG6320C |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 3/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N/P-CH DUAL 25V SC70-6 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Mold Compound Change 12/Dec/2007 Mold Compound Change 07/May/2008 |
| 标准包装： | 1 |
| FET 型： | N 和 P 沟道 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 25V |
| 电流 - 连续漏极(Id) @ 25° C： | 220mA，140mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 4 欧姆 @ 220mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 0.4nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 9.5pF @ 10V |
| 功率 - 最大： | 300mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSSOP，SC-88，SOT-363 |
| 供应商设备封装： | SC-70-6 |
| 包装： | 标准包装 |
| 其它名称： | FDG6320CDKR |
Electrical Characteristics (continued)
SWITCHING CHARACTERISTICS (Note 2)
Symbol
t D(on)
Parameter
Turn - On Delay Time
Conditions
N-Channel
Type
N-Ch
Min
Typ
5
Max
12
Units
nS
V DD = 5 V, I D = 0.5 A ,
P-Ch
5
12
t r
Turn - On Rise Time
V GS = 4.5 V, R GEN = 50 ?
N-Ch
4.5
10
nS
P-Ch
8
16
t D(off)
Turn - Off Delay Time
P-Channel
N-Ch
4
8
nS
V DD = -5 V, I D = -0.5 A,
P-Ch
9
18
t f
Turn - Off Fall Time
V GS = -4.5 V, R GEN = 50 ?
N-Ch
3.2
7
nS
P-Ch
5
12
Q g
Total Gate Charge
N-Channel
N-Ch
0.29
0.4
nC
V DS = 5 V, I D = 0.22 A,
P-Ch
0.22
0.31
Q gs
Gate-Source Charge
V GS = 4.5 V
N-Ch
0.12
nC
P- Channel
P-Ch
0.12
Q gd
Gate-Drain Charge
V DS = -5 V, I D = -0.14 A,
N-Ch
0.03
nC
V GS = -4.5 V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
P-Ch
0.05
I S
Maximum Continuous Drain-Source Diode Forward Current
N-Ch
0.25
A
P-Ch
-0.25
V SD
Drain-Source Diode Forward Voltage
V GS = 0 V, I S = 0.5 A
(Note 2)
N-Ch
0.8
1.2
V
V GS = 0 V, I S = -0.5 A
(Note 2)
P-Ch
-0.8
-1.2
Notes:
1. R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θ JC is guaranteed by
design while R θ CA is determined by the user's board design. R θ JA = 415 O C/W on minimum mounting pad on FR-4 board in still air.
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
FDG6320C Rev. D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDG6320C | 制造商:Fairchild Semiconductor Corporation 功能描述:25V 1/2 BR N/P 4/10 O SC70-6 |
| FDG6320C_D87Z | 功能描述:MOSFET SC70-6 COMP N-P-CH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDG6321 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual N & P Channel Digital FET |
| FDG6321C | 功能描述:MOSFET SC70-6 COMP N-P-CH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDG6321C | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO |
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