参数资料
型号: FDI150N10
厂商: Fairchild Semiconductor
文件页数: 7/8页
文件大小: 0K
描述: MOSFET N-CH 100V 57A I2PAK
标准包装: 50
系列: PowerTrench®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 100V
电流 - 连续漏极(Id) @ 25° C: 57A
开态Rds(最大)@ Id, Vgs @ 25° C: 16 毫欧 @ 49A,10V
Id 时的 Vgs(th)(最大): 4.5V @ 250µA
闸电荷(Qg) @ Vgs: 69nC @ 10V
输入电容 (Ciss) @ Vds: 4760pF @ 25V
功率 - 最大: 110W
安装类型: 通孔
封装/外壳: TO-262-3,长引线,I²Pak,TO-262AA
供应商设备封装: TO-262-3
包装: 管件
Mechanical Dimensions
Figure 16. TO262 (I 2 PAK), Molded, 3-Lead, Jedec Variation AA
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor ’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT262-003
?2009 Fairchild Semiconductor Corporation
FDI150N10 Rev. C1
7
www.fairchildsemi.com
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FDI2532 MOSFET N-CH 150V 79A TO-262AB
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