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| 型号： | FDMS7658AS |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V POWER56 |
| 标准包装： | 3,000 |
| 系列： | PowerTrench®, SyncFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 29A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 1.9 毫欧 @ 28A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 1mA |
| 闸电荷(Qg) @ Vgs： | 109nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 7350pF @ 15V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-PQFN，Power56 |
| 供应商设备封装： | Power56 |
| 包装： | 带卷 (TR) |
May 2013
FDMS7658AS
N-Channel PowerTrench ? SyncFET TM
30 V, 70 A, 1.9 m :
Features
? Max r DS(on) = 1.9 m : at V GS = 10 V, I D = 28 A
? Max r DS(on) = 2.2 m : at V GS = 7 V, I D = 26 A
? Advanced Package and Silicon combination for low r DS(on)
and high efficiency
? SyncFET Schottky Body Diode
? MSL1 robust package design
? 100% UIL tested
? RoHS Compliant
General Description
The FDMS7658AS has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
r DS(on) while maintaining excellent switching performance. This
device has the added benefit of an efficient monolithic Schottky
body diode.
Applications
? Synchronous Rectifier for DC/DC Converters
? Notebook Vcore/ GPU low side switch
? Networking Point of Load low side switch
? Telecom secondary side rectification
Top
Bottom
Pin 1
S
S
S
G
D
D
D
D
Power 56
MOSFET Maximum Ratings T A = 25 °C unless otherwise noted
Symbol
V DS
Drain to Source Voltage
Parameter
Ratings
30
Units
V
V GS
Gate to Source Voltage
Drain Current -Continuous
T C = 25 °C
(Note 4)
±20
70
V
I D
-Continuous
T A = 25 °C
(Note 1a)
29
A
-Pulsed
150
dv/dt
MOSFET dv/dt
1.5
V/ns
E AS
Single Pulse Avalanche Energy
(Note 3)
162
mJ
P D
Power Dissipation
Power Dissipation
T C = 25 °C
T A = 25 °C
(Note 1a)
89
2.5
W
T J , T STG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
R T JC
R T JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1a)
1.4
50
°C/W
Package Marking and Ordering Information
Device Marking
FDMS7658AS
Device
FDMS7658AS
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
?2012 Fairchild Semiconductor Corporation
FDMS7658AS Rev.C3
1
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FDMS7660AS | MOSFET N-CH 30V PWRSTAGE POWER56 |
| FDMS7660 | MOSFET N-CH 30V 25A POWER56 |
| FDMS7670AS | MOSFET N-CH 30V SYNCFET POWER56 |
| FDMS7670 | MOSFET N-CH 30V 21A POWER56 |
| FDMS7672AS | MOSFET N-CH 30V SYNCFET POWER56 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDMS7660 | 功能描述:MOSFET 30/20V Nch Power Trench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMS7660AS | 功能描述:MOSFET PT7 30/20V Nch PowerTrench SyncFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMS7670 | 功能描述:MOSFET 30V 42A N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMS7670_12 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 30 V, 3.8 m?? |
| FDMS7670AS | 功能描述:MOSFET PT7 30/20V Nch PowerTrench SyncFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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