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参数资料
| 型号： | FDMS7672AS |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V SYNCFET POWER56 |
| 标准包装： | 3,000 |
| 系列： | PowerTrench®, SyncFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 19A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 4 毫欧 @ 18A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 1mA |
| 闸电荷(Qg) @ Vgs： | 46nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 2820pF @ 15V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-PowerTDFN |
| 供应商设备封装： | 8-PQFN（5X6），Power56 |
| 包装： | 带卷 (TR) |
| 其它名称： | FDMS7672AS-ND FDMS7672ASTR |
September 2009
FDMS7672AS
N-Channel PowerTrench ? SyncFET TM
30 V, 42 A, 4 m ?
Features
Max r DS(on) = 4.0 m ? at V GS = 10 V, I D = 18 A
Max r DS(on) = 4.5 m ? at V GS = 7 V, I D = 16 A
Advanced Package and Silicon combination for low r DS(on)
and high efficiency
SyncFET Schottky Body Diode
MSL1 robust package design
100% UIL tested
RoHS Compliant
General Description
The FDMS7672AS has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
r DS(on) while maintaining excellent switching performance. This
device has the added benefit of an efficient monolithic Schottky
body diode.
Applications
Synchronous Rectifier for DC/DC Converters
Notebook Vcore/ GPU low side switch
Networking Point of Load low side switch
Telecom secondary side rectification
Top
Bottom
S
S
S
Pin 1
G
D
D
5
6
4 G
3 S
D
7
2
S
D
D
D
D
D
8
1
S
Power 56
MOSFET Maximum Ratings T A = 25 °C unless otherwise noted
Symbol
V DS
Drain to Source Voltage
Parameter
Ratings
30
Units
V
V GS
Gate to Source Voltage
Drain Current -Continuous (Package limited)
T C = 25 °C
(Note 4)
±20
42
V
I D
-Continuous (Silicon limited)
-Continuous
T C = 25 °C
T A = 25 °C
(Note 1a)
83
19
A
-Pulsed
90
dv/dt
MOSFET dv/dt
2.6
V/ns
E AS
Single Pulse Avalanche Energy
(Note 3)
60
mJ
P D
Power Dissipation
Power Dissipation
T C = 25 °C
T A = 25 °C
(Note 1a)
46
2.5
W
T J , T STG
Operating and Storage Junction Temperature Range
-55 to +150
° C
Thermal Characteristics
R θ JC
R θ JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1a)
2.7
50
°C/W
Package Marking and Ordering Information
Device Marking
FDMS7672AS
Device
FDMS7672AS
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
?2009 Fairchild Semiconductor Corporation
FDMS7672AS Rev.C
1
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FDMS7672 | MOSFET N-CH 30V 19A POWER56 |
| FDMS7676 | MOSFET N-CH 30V POWER56 |
| FDMS7682 | MOSFET N-CH 30V 22A POWER56 |
| FDMS7692A | MOSFET N-CH 30V 13.5A POWER56 |
| FDMS7692 | MOSFET N-CH 30V 14A POWER56 |
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