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参数资料
| 型号： | FDMS7682 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 22A POWER56 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 16A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 6.3 毫欧 @ 14A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 30nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1885pF @ 15V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-PQFN，Power56 |
| 供应商设备封装： | Power56 |
| 包装： | 标准包装 |
| 其它名称： | FDMS7682DKR |
July 2010
FDMS7682
N-Channel PowerTrench ? MOSFET
30 V, 6.3 m Ω
Features
Max r DS(on) = 6.3 m Ω at V GS = 10 V, I D = 14 A
Max r DS(on) = 10.4 m Ω at V GS = 4.5 V, I D = 11 A
Advanced Package and Silicon combination for low r DS(on)
and high efficiency
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers.It has been optimized
for low gate charge, low r DS(on) , fast switching speed and body
Next generation enhanced
body
diode
technology,
diode reverse recovery performance.
engineered for soft recovery
MSL1 robust package design
100% UIL tested
RoHS Compliant
Applications
IMVP Vcore Switching for Notebook
VRM Vcore Switching for Desktop and server
OringFET / Load Switching
DC-DC Conversion
Top
Bottom
Pin 1
S
S
S
G
D
D
5
6
4
3
G
S
D
7
2
S
D
D
D
D
D
8
1
S
Power 56
MOSFET Maximum Ratings T A = 25 °C unless otherwise noted
Symbol
V DS
Drain to Source Voltage
Parameter
Ratings
30
Units
V
V GS
Gate to Source Voltage
Drain Current -Continuous (Package limited)
T C = 25 °C
(Note 4)
±20
22
V
I D
-Continuous (Silicon limited)
-Continuous
T C = 25 °C
T A = 25 °C
(Note 1a)
59
16
A
-Pulsed
80
E AS
Single Pulse Avalanche Energy
(Note 3)
29
mJ
P D
Power Dissipation
Power Dissipation
T C = 25 °C
T A = 25 °C
(Note 1a)
33
2.5
W
T J , T STG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
R θ JC
R θ JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1a)
3.7
50
°C/W
Package Marking and Ordering Information
Device Marking
FDMS7682
Device
FDMS7682
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
?2010 Fairchild Semiconductor Corporation
FDMS7682 Rev . C
1
www.fairchildsemi.com
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