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参数资料
| 型号： | FDMS7682 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 22A POWER56 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 16A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 6.3 毫欧 @ 14A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 30nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1885pF @ 15V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-PQFN，Power56 |
| 供应商设备封装： | Power56 |
| 包装： | 标准包装 |
| 其它名称： | FDMS7682DKR |
Electrical Characteristics T J = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV DSS
Δ BV DS S
Δ T J
I DSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
I D = 250 μ A, V GS = 0 V
I D = 250 μ A, referenced to 25 °C
V DS = 24 V, V GS = 0 V
30
15
1
V
mV/°C
μ A
I GSS
Gate to Source Leakage Current, Forward V GS = ±20 V, V DS = 0 V
100
nA
On Characteristics
V GS(th)
Δ V GS(th )
Δ T J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V GS = V DS , I D = 250 μ A
I D = 250 μ A, referenced to 25 °C
1.25
1.9
-6
3.0
V
mV/°C
V GS = 10 V, I D = 14 A
5.2
6.3
r DS(on)
Static Drain to Source On Resistance
V GS = 4.5 V, I D = 11 A
8.0
10.4
m Ω
V GS = 10 V, I D = 14 A, T J = 125 °C
7.0
8.5
g FS
Forward Transconductance
V DS = 5 V, I D = 14 A
70
S
Dynamic Characteristics
C iss
C oss
C rss
R g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V DS = 15 V, V GS = 0 V,
f = 1 MHz
1416
479
50
0.7
1885
640
75
2.4
pF
pF
pF
Ω
Switching Characteristics
t d(on)
Turn-On Delay Time
9.4
19
ns
t r
t d(off)
t f
Q g
Q g
Q gs
Q gd
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
V DD = 15 V, I D = 14 A,
V GS = 10 V, R GEN = 6 Ω
V GS = 0 V to 10 V
V GS = 0 V to 4.5 V V DD = 15 V,
I D = 14 A
2.7
22
2.2
21
9.9
4.3
2.8
10
35
10
30
14
ns
ns
ns
nC
nC
nC
nC
Drain-Source Diode Characteristics
V SD
t rr
Q rr
t rr
Q rr
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I S = 2.1 A
V GS = 0 V, I S = 14 A
I F = 14 A, di/dt = 100 A/ μ s
I F = 14 A, di/dt = 300 A/ μ s
(Note 2)
(Note 2)
0.74
0.83
27
10
20
17
1.2
1.3
43
21
36
30
V
ns
nC
ns
nC
Notes :
1. R θ JA is determined with the device mounted on a 1in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R θ JC is guaranteed by design while R θ CA is determined by
the user's board design.
a) 50 °C/W when mounted on a
1 in 2 pad of 2 oz copper
b) 125 °C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 μ s, Duty cycle < 2.0%.
3. E AS of 29 mJ is based on starting T J = 25 ° C, L = 0.3 mH, I AS = 14 A, V DD = 27 V, V GS = 10 V. 100% test at L = 0.1 mH, I AS = 21 A.
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
FDMS7682 Rev . C
2
www.fairchildsemi.com
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