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| 型号： | FDMS7672 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 19A POWER56 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Power 56 Pkg/Design Change 14/Apr/2009 |
| 产品目录绘图： | Power56 Single |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 19A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 5 毫欧 @ 19A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 44nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 2960pF @ 15V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-PQFN，Power56 |
| 供应商设备封装： | Power56 |
| 包装： | 标准包装 |
| 产品目录页面： | 1609 (CN2011-ZH PDF) |
| 其它名称： | FDMS7672DKR |
April 2009
FDMS7672
N-Channel PowerTrench ? MOSFET
30 V, 5.0 m ?
Features
Max r DS(on) = 5.0 m ? at V GS = 10 V, I D = 19 A
Max r DS(on) = 6.9 m ? at V GS = 4.5 V, I D = 15 A
Advanced Package and Silicon design for low r DS(on) and high
efficiency
Next generation enhanced body diode technology, engineered
for soft recovery. Provides Schottky-like performance with
minimum EMI in sync buck converter applications
MSL1 robust package design
100% UIL tested
RoHS Compliant
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers. It has been optimized
for low gate charge, low r DS(on), fast switching speed and body
diode reverse recovery performance.
Applications
IMVP Vcore Switching for Notebook
VRM Vcore Switching for Desktop and Server
OringFET / Load Switch
DC-DC Conversion
Top
Bottom
S
S
S
Pin 1
G
D
D
5
6
4
3
G
S
D
7
2
S
D
D
D
D
D
8
1
S
Power 56
MOSFET Maximum Ratings T A = 25 °C unless otherwise noted
Symbol
V DS
Drain to Source Voltage
Parameter
Ratings
30
Units
V
V GS
Gate to Source Voltage
Drain Current -Continuous (Package limited)
T C = 25 °C
(Note 4)
±20
28
V
I D
-Continuous (Silicon limited)
-Continuous
T C = 25 °C
T A = 25 °C
(Note 1a)
80
19
A
-Pulsed
90
E AS
Single Pulse Avalanche Energy
(Note 3)
72
mJ
P D
Power Dissipation
Power Dissipation
T C = 25 °C
T A = 25 °C
(Note 1a)
48
2.5
W
T J , T STG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
R θ JC
R θ JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1a)
2.6
50
°C/W
Package Marking and Ordering Information
Device Marking
FDMS7672
Device
FDMS7672
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
?2009 Fairchild Semiconductor Corporation
FDMS7672 Rev . D
1
www.fairchildsemi.com
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| FDMS7692 | MOSFET N-CH 30V 14A POWER56 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDMS7672AS | 功能描述:MOSFET PT7 30/20V Nch PowerTrench SyncFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMS7676 | 功能描述:MOSFET 30/20V N-Chan PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMS7678 | 功能描述:MOSFET 30V/20V N-Ch PowerTrench SyncFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMS7680 | 功能描述:MOSFET 30/20V Nch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMS7681 | 制造商:Fairchild Semiconductor Corporation 功能描述:LINEAR IC |
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