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| 型号： | FDMS8023S |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V POWER56 |
| 标准包装： | 1 |
| 系列： | PowerTrench®, SyncFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 26A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 2.4 毫欧 @ 26A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 1mA |
| 闸电荷(Qg) @ Vgs： | 57nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 3550pF @ 15V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-PQFN，Power56 |
| 供应商设备封装： | Power56 |
| 包装： | 标准包装 |
| 其它名称： | FDMS8023SDKR |
August 2010
FDMS8023S
N-Channel PowerTrench ? SyncFET TM
30 V, 49 A, 2.4 m Ω
Features
Max r DS(on) = 2.4 m Ω at V GS = 10 V, I D = 26 A
Max r DS(on) = 3.0 m Ω at V GS = 4.5 V, I D = 23 A
Advanced package and silicon combination for low r DS(on) and
high efficiency
SyncFET Schottky Body Diode
MSL1 robust package design
100% UIL tested
RoHS Compliant
General Description
The FDMS8023S has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
r DS(on) while maintaining excellent switching performance.This
device has the added benefit of an efficient monolithic Schottky
body diode.
Applications
Synchronous Rectifier for DC/DC Converters
Notebook Vcore/GPU low side switch
Networking Point of Load low side switch
Telecom secondary side rectification
Top
Bottom
Pin 1
S
S
S
G
D
D
5
6
4 G
3 S
D
7
2 S
D
D
D
D
D
8
1
S
Power 56
MOSFET Maximum Ratings T C = 25°C unless otherwise noted
Symbol
V DS
Drain to Source Voltage
Parameter
Ratings
30
Units
V
V GS
Gate to Source Voltage
Drain Current -Continuous (Package limited)
T C = 25°C
(Note 4)
±20
49
V
I D
-Continuous (Silicon limited)
-Continuous
T C = 25°C
T A = 25°C
(Note 1a)
128
26
A
-Pulsed
100
E AS
Single Pulse Avalanche Energy
(Note 3)
86
mJ
P D
Power Dissipation
Power Dissipation
T C = 25°C
T A = 25°C
(Note 1a)
59
2.5
W
T J , T STG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
R θ JC
R θ JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1a)
2.1
50
°C/W
Package Marking and Ordering Information
Device Marking
FDMS8023S
Device
FDMS8023S
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
?2010 Fairchild Semiconductor Corporation
FDMS8023S Rev.C1
1
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FDMS8025S | MOSFET N-CH 30V POWER56 |
| FDMS8026S | MOSFET N-CH 30V POWER56 |
| FDMS8027S | MOSFET N-CH 30V POWER56 |
| FDMS8320L | MOSFET N-CH 40V 36A 8-PQFN |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDMS8025S | 功能描述:MOSFET 30V N-Channel PowerTrench SyncFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMS8026S | 功能描述:MOSFET 30V N-Channel PowerTrench SyncFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMS8027S | 功能描述:MOSFET 30V N-Channel PowerTrench SyncFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMS8090 | 功能描述:MOSFET 100V Sym Dual NCh MOSFET PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMS8320L | 功能描述:MOSFET 40V/20V NCh PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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