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| 型号： | FDMS8320L |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 40V 36A 8-PQFN |
| 标准包装： | 3,000 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 40V |
| 电流 - 连续漏极(Id) @ 25° C： | 36A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 1.1 毫欧 @ 32A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 170nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 11110pF @ 20V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-TDFN 裸露焊盘 |
| 供应商设备封装： | 8-PQFN（5x6） |
| 包装： | 带卷 (TR) |
June 2012
FDMS8320 L
N-Channel PowerTrench ? MOSFET
40 V, 100 A, 1.1 m Ω
Features
Max r DS(on) = 1.1 m Ω at V GS = 10 V, I D = 32 A
Max r DS(on) = 1.5 m Ω at V GS = 4.5 V, I D = 27 A
Advanced Package and Silicon combination for low r DS(on)
and high efficiency
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers.It has been optimized
for low gate charge, low r DS(on) , fast switching speed ang body
Next generation enhanced
body
diode
technology,
diode reverse recovery performance.
engineered for soft recovery
MSL1 robust package design
100% UIL tested
RoHS Compliant
Applications
OringFET / Load Switching
Synchronous Rectification
DC-DC Conversion
Top
Bottom
Pin 1
Pin 1
S
S
S
G
S
S
D
D
S
D
D
D
D
D
G
D
Power 56
MOSFET Maximum Ratings T A = 25 °C unless otherwise noted
Symbol
V DS
V GS
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
T C = 25 °C
Ratings
40
±20
100
Units
V
V
I D
-Continuous (Silicon limited)
-Continuous
T C = 25 °C
T A = 25 °C
(Note 1a)
238
36
A
-Pulsed
150
E AS
Single Pulse Avalanche Energy
(Note 3)
264
mJ
P D
Power Dissipation
Power Dissipation
T C = 25 °C
T A = 25 °C
(Note 1a)
104
2.5
W
T J , T STG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
R θ JC
R θ JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1a)
1.2
50
°C/W
Package Marking and Ordering Information
Device Marking
FDMS8320L
Device
FDMS8320L
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
?2012 Fairchild Semiconductor Corporation
FDMS8320L Rev . C3
1
www.fairchildsemi.com
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相关代理商/技术参数 |
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|---|---|
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| FDMS8333 | 制造商:Fairchild 功能描述:40/20V Nch Power Trench MOSFET |
| FDMS8333L | 功能描述:MOSFET NChan 40V 76A 69W PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMS8460 | 功能描述:MOSFET 40V N-Channel Power Trench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMS8558S | 功能描述:MOSFET 25/12V Dual Cool PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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