- 您现在的位置：买卖IC网 > Datasheet目录422 > FDMS86101DC (Fairchild Semiconductor)MOSFET N-CH 100V 14.5A 8-PQFN Datasheet资料下载
参数资料
| 型号： | FDMS86101DC |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 14.5A 8-PQFN |
| 标准包装： | 3,000 |
| 系列： | Dual Cool™, PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 14.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 7.5 毫欧 @ 14.5A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 44nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 3135pF @ 50V |
| 功率 - 最大： | 3.2W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-TDFN 裸露焊盘 |
| 供应商设备封装： | 8-PQFN（5x6） |
| 包装： | 带卷 (TR) |
July 2013
FDMS86101DC
N-Channel Dual Cool TM Shielded Gate PowerTrench ? MOSFET
100 V, 60 A, 7.5 m Ω
Features
Shielded Gate MOSFET Technology
General Description
This N-Channel MOSFET is produced using Fairchild
Dual Cool
TM
Top Side Cooling PQFN package
Semiconductor’s advanced PowerTrench ? process that
incorporates Shielded Gate technology. Advancements in both
Max r DS(on) = 7.5 m Ω at V GS = 10 V, I D = 14.5 A
Max r DS(on) = 12 m Ω at V GS = 6 V, I D = 11.5 A
High performance technology for extremely low r DS(on)
100% UIL Tested
RoHS Compliant
silicon and Dual Cool TM package technologies have been
combined to offer the lowest r DS(on) while maintaining excellent
switching performance by extremely low Junction-to-Ambient
thermal resistance.
Applications
Primary DC-DC MOSFET
Secondary Synchronous Rectifier
Load Switch
D
D
D
S
D
Pin 1
S
D
S
D
G
S
S
S
Pin 1
S
G
D
D
Top
Power 56
Bottom
MOSFET Maximum Ratings T A = 25 °C unless otherwise noted
Symbol
V DS
V GS
Drain to Source Voltage
Gate to Source Voltage
Parameter
Ratings
100
±20
Units
V
V
Drain Current
-Continuous
T C = 25 °C
60
I D
-Continuous
T A = 25 °C
(Note 1a)
14.5
A
-Pulsed
200
E AS
Single Pulse Avalanche Energy
(Note 3)
216
mJ
P D
Power Dissipation
Power Dissipation
T C = 25 °C
T A = 25 °C
(Note 1a)
125
3.2
W
T J , T STG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
R θ JC
R θ JC
R θ JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Top Source)
(Bottom Drain)
(Note 1a)
2.3
1.0
38
R θ JA
R θ JA
R θ JA
R θ JA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
(Note 1b)
(Note 1i)
(Note 1j)
(Note 1k)
81
16
23
11
°C/W
Package Marking and Ordering Information
Device Marking
86101
Device
FDMS86101DC
Package
Dual Cool TM Power 56
Reel Size
13’’
Tape Width
12 mm
Quantity
3000 units
?2013 Fairchild Semiconductor Corporation
FDMS86101DC Rev. C4
1
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FDMS86101 | MOSFET N-CH 100V 12.4A POWER56 |
| FDMS86102LZ | MOSFET N-CH 100V 7A 8-PQFN |
| FDMS86103L | MOSFET N-CH 100V 12A POWER56 |
| FDMS86104 | MOSFET N-CH 100V 7A POWER56 |
| FDMS86105 | MOSFET N-CH 100V POWER56 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDMS86102LZ | 功能描述:MOSFET 100V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMS86103L | 功能描述:MOSFET 100V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMS86104 | 功能描述:MOSFET 100V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMS86105 | 功能描述:MOSFET 100V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMS86150 | 功能描述:MOSFET PT5 100V/20V Nch PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。