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| 型号： | FDMS8558S |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 25V 33A 8-PQFN |
| 标准包装： | 3,000 |
| 系列： | PowerTrench®, SyncFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 25V |
| 电流 - 连续漏极(Id) @ 25° C： | 33A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 1.5 毫欧 @ 33A，10V |
| Id 时的 Vgs(th)（最大）： | 2.2V @ 1mA |
| 闸电荷(Qg) @ Vgs： | 81nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 5118pF @ 13V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-TDFN 裸露焊盘 |
| 供应商设备封装： | 8-PQFN（5x6） |
| 包装： | 带卷 (TR) |
FDMS8558S
N-Channel PowerTrench ? SyncFET TM
25 V, 90 A, 1.5 m Ω
April 2012
Features
Max r DS(on) = 1.5 m Ω at V GS = 10 V, I D = 33 A
Max r DS(on) = 1.7 m Ω at V GS = 4.5 V, I D = 31 A
High performance technology for extremely low r DS(on)
SyncFET TM Schottky Body Diode
RoHS Compliant
General Description
This N-Channel SyncFET TM is produced using Fairchild
Semiconductor’s advanced PowerTrench ? process.
Advancements in both silicon and package technologies have
been combined to offer the lowest r DS(on) while maintaining
excellent switching performance by extremely low Junction-to-
Ambient thermal resistance. This device has the added benefit
of an efficient monolithic Schottky body diode.
Applications
Synchronous Rectifier for DC/DC Converters
Telecom Secondary Side Rectification
High End Server/Workstation Vcore Low Side
Top
Bottom
Pin 1
S
S
S
G
D
D
5
6
4 G
3 S
D
7
2 S
D
D
D
D
D
8
1
S
Power 56
MOSFET Maximum Ratings T A = 25°C unless otherwise noted
Symbol
V DS
V GS
Drain to Source Voltage
Gate to Source Voltage
Parameter
Ratings
25
12
Units
V
V
Drain Current
-Continuous (Package limited)
T C = 25 °C
90
I D
-Continuous
T A = 25 °C
(Note 1a)
33
A
-Pulsed
140
E AS
Single Pulse Avalanche Energy
(Note 3)
145
mJ
P D
Power Dissipation
Power Dissipation
T C = 25 °C
T A = 25 °C
(Note 1a)
78
2.5
W
T J , T STG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
R θ JC
R θ JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
T C = 25 °C
T A = 25 °C
(Note 1a)
1.6
50
°C/W
Package Marking and Ordering Information
Device Marking
09OD
Device
FDMS8558S
Package
Power 56
Reel Size
13’’
Tape Width
12 mm
Quantity
3000 units
?2012 Fairchild Semiconductor Corporation
FDMS8558S Rev.D1
1
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FDMS8560S | MOSFET N-CH 25V 30A 8-PQFN |
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| FDMS86101DC | MOSFET N-CH 100V 14.5A 8-PQFN |
| FDMS86101 | MOSFET N-CH 100V 12.4A POWER56 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDMS8558SDC | 功能描述:MOSFET N-Channel PowerTrench SyncFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMS8560S | 功能描述:MOSFET 25/12V Dual Cool PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMS8570S | 功能描述:MOSFET 25/12V Dual Cool PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMS8570SDC | 功能描述:MOSFET 25V N-Channel PowerTrench SyncFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMS86101 | 功能描述:MOSFET 100/20V Nch Power Trench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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