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| 型号： | FDMS86250 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 150V 6.7A 8-PQFN |
| 标准包装： | 3,000 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 150V |
| 电流 - 连续漏极(Id) @ 25° C： | 6.7A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 25 毫欧 @ 6.7A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 36nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 2330pF @ 75V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-TDFN 裸露焊盘 |
| 供应商设备封装： | 8-PQFN（5X6），Power56 |
| 包装： | 带卷 (TR) |
January 2014
FDMS86250
N-Channel Shielded Gate PowerTrench ? MOSFET
150 V, 30 A, 25 m Ω
Features
Shielded Gate MOSFET Technology
Max r DS(on) = 25 m Ω at V GS = 10 V, I D = 6.7 A
Max r DS(on) = 33 m Ω at V GS = 6 V, I D = 5.8 A
Advanced package and silicon combination for low r DS(on) and
high efficiency
MSL1 robust package design
100% UIL tested
RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench ? process that
incorporates Shielded Gate technology. This process has been
optimized for the on-state resistance and yet maintain superior
switching performance.
Application
DC-DC Conversion
Top
Bottom
Pin 1
S
S
S
G
S
S
D
D
S
D
D
D
D
D
G
D
Power 56
MOSFET Maximum Ratings T A = 25 °C unless otherwise noted
Symbol
V DS
V GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
Parameter
T C = 25 °C
Ratings
150
±20
30
Units
V
V
I D
-Continuous
T A = 25 °C
(Note 1a)
6.7
A
-Pulsed
(Note 4)
100
E AS
Single Pulse Avalanche Energy
(Note 3)
180
mJ
P D
Power Dissipation
Power Dissipation
T C = 25 °C
T A = 25 °C
(Note 1a)
96
2.5
W
T J , T STG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
R θ JC
R θ JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1a)
1.3
50
°C/W
Package Marking and Ordering Information
Device Marking
FDMS86250
Device
FDMS86250
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
?2012 Fairchild Semiconductor Corporation
FDMS86250 Rev. C2
1
www.fairchildsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
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| FDMS86252L | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N-CH 150V 8-MLP 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET 150V N-Channel Shielded Gate PowerTrench MOSFET 制造商:Fairchild Semiconductor Corporation 功能描述:TAPE REEL / 150/20V N-Channel PowerTrench MOSFET |
| FDMS86300 | 功能描述:MOSFET 80V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMS86300DC | 功能描述:MOSFET 80V N-Ch Dual Cool PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMS86310 | 功能描述:MOSFET 80V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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