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参数资料
| 型号： | FDN304P_NL |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | P-Channel 1.8V Specified PowerTrench MOSFET |
| 中文描述： | 2400 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SUPERSOT-3 |
| 文件页数： | 1/5页 |
| 文件大小： | 113K |
| 代理商： | FDN304P_NL |
January 2001
2001 Fairchild Semiconductor Corporation
FDN304P Rev C(W)
FDN304P
P-Channel 1.8V Specified PowerTrench
MOSFET
General Description
This
P-Channel
1.8V
specified
MOSFET
uses
Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management
applications.
Applications
Battery management
Load switch
Battery protection
Features
–2.4 A, –20 V. R
DS(ON) = 52 m
@ V
GS = –4.5 V
RDS(ON) = 70 m
@ V
GS = –2.5 V
RDS(ON) = 100 m
@ V
GS = –1.8 V
Fast switching speed
High performance trench technology for extremely
low RDS(ON)
SuperSOTTM -3 provides low R
DS(ON) and 30% higher
power handling capability than SOT23 in the same
footprint
G
D
S
SuperSOT -3
TM
D
S
G
Absolute Maximum Ratings
TA=25
oC unless otherwise noted
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
–20
V
VGSS
Gate-Source Voltage
±8
V
ID
Drain Current
– Continuous
(Note 1a)
–2.4
A
– Pulsed
–10
Maximum Power Dissipation
(Note 1a)
0.5
PD
(Note 1b)
0.46
W
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
250
°C/W
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
75
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
304
FDN304P
7’’
8mm
3000 units
F
DN30
4
P
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDN304PZ | 功能描述:MOSFET P-Ch PowerTrench Specified 1.8V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDN304PZ_Q | 功能描述:MOSFET P-Ch PowerTrench Specified 1.8V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDN306P | 功能描述:MOSFET P-Ch PowerTrench Specified 1.8V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDN306P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDN306P_G | 制造商:Fairchild 功能描述:MOSET , -12V/2.6A, SSOT3 |
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