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参数资料
| 型号： | FDN304P_NL |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | P-Channel 1.8V Specified PowerTrench MOSFET |
| 中文描述： | 2400 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SUPERSOT-3 |
| 文件页数： | 3/5页 |
| 文件大小： | 113K |
| 代理商： | FDN304P_NL |
FDN304P Rev C(W)
Typical Characteristics
0
3
6
9
12
15
00.5
11.522.5
-VDS, DRAIN-SOURCE VOLTAGE (V)
-I
D
,DRAIN
CURRE
NT
(
A
)
-1.8V
-2.0V
-2.5V
-1.5V
V
GS = -4.5V
-3.0V
0.5
1
1.5
2
2.5
3
3.5
4
036
9
12
15
-ID, DRAIN CURRENT (A)
VGS = -1.5V
-2.0V
-2.5V
-4.5V
-3.0V
-1.8V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
-50
-25
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (
o
C)
ID = -2.4A
VGS = -4.5V
0.02
0.04
0.06
0.08
0.1
0.12
0.14
12
34
5
-VGS, GATE TO SOURCE VOLTAGE (V)
ID = -1.2 A
TA = 125
oC
TA = 25
oC
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
3
6
9
12
15
0
0.5
1
1.5
2
2.5
3
-VGS, GATE TO SOURCE VOLTAGE (V)
TA =
25
oC
VDS = - 5V
-55
oC
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-VSD, BODY DIODE FORWARD VOLTAGE (V)
TA = 125
oC
25
oC
-55
oC
VGS = 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
F
DN30
4
P
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDN304PZ | 功能描述:MOSFET P-Ch PowerTrench Specified 1.8V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDN304PZ_Q | 功能描述:MOSFET P-Ch PowerTrench Specified 1.8V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDN306P | 功能描述:MOSFET P-Ch PowerTrench Specified 1.8V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDN306P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDN306P_G | 制造商:Fairchild 功能描述:MOSET , -12V/2.6A, SSOT3 |
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