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参数资料
| 型号： | FDN358P |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| 中文描述： | 1500 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SUPERSOT-3 |
| 文件页数： | 1/4页 |
| 文件大小： | 85K |
| 代理商： | FDN358P |
March 1998
FDN358P
P-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description Features
Absolute Maximum Ratings
T
A
= 25
o
C unless other wise noted
Symbol
Parameter
FDN358P
Units
V
DSS
Drain-Source Voltage
-30
V
V
GSS
Gate-Source Voltage
±20
V
I
D
Drain/Output Current - Continuous
-1.5
A
- Pulsed
-5
P
D
Maximum Power Dissipation
(Note 1a)
0.5
W
(Note 1b)
0.46
T
J
,T
STG
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
(Note 1a)
250
°C/W
Thermal Resistance, Junction-to-Case
(Note 1)
75
°C/W
FDN358P Rev.D
-1.5 A, -30 V, R
DS(ON)
= 0.125
@ V
GS
= -10 V
R
DS(ON)
= 0.20
@ V
GS
= - 4.5 V.
High power version of industry SOT-23 package: identical
pin out to SOT-23; 30% higher power handling capability.
High density cell design for extremely low R
DS(ON)
.
Exceptional on-resistance and maximum DC current
capability.
SuperSOT
TM
-3 P-Channel logic level enhancement mode
power field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This very
high density process is especially tailored to minimize
on-state resistance. These devices are particularly suited for
low voltage applications in notebook computers, portable
phones, PCMCIA cards, and other battery powered circuits
where fast switching, and low in-line power loss are needed
in a very small outline surface mount package.
G
D
S
SuperSOT -3
358
SuperSOT
TM
-8
SOIC-16
SO-8
SOT-223
SuperSOT
TM
-3
SuperSOT
TM
-6
D
S
G
1998 Fairchild Semiconductor Corporation
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|---|---|
| FDN359BN | N-Channel Logic Level PowerTrench TM MOSFET |
| FDN359 | N-Channel Logic Level PowerTrenchTM MOSFET |
| FDN359AN | N-Channel Logic Level PowerTrenchTM MOSFET |
| FDN360 | Single P-Channel PowerTrenchTM MOSFET |
| FDN360P | Single P-Channel PowerTrenchTM MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDN358P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SOT-23 |
| FDN358P_G | 制造商:Fairchild 功能描述:Single Pch, Logic Level, Power |
| FDN358P_Q | 功能描述:MOSFET SSOT-3 P-CH -30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDN358P-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDN358P Series 30V 125 mOhm Single P-Ch Logic Level PowerTrench Mosfet SSOT-3 |
| FDN359 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel Logic Level PowerTrenchTM MOSFET |
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