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参数资料
| 型号： | FDN358P |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| 中文描述： | 1500 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SUPERSOT-3 |
| 文件页数： | 2/4页 |
| 文件大小： | 85K |
| 代理商： | FDN358P |
Electrical Characteristics
(T
A
= 25
O
C unless otherwise noted )
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
BV
DSS
/
T
J
I
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= -250 μA
I
D
= -250 μA, Referenced to 25
o
C
-30
V
Breakdown Voltage Temp. Coefficient
-28
mV/
o
C
Zero Gate Voltage Drain Current
V
DS
= -24 V, V
GS
= 0 V
-1
μA
T
J
= 55°C
-10
μA
I
GSSF
I
GSSR
ON CHARACTERISTICS
(Note 2)
Gate - Body Leakage, Forward
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
100
nA
Gate - Body Leakage, Reverse
-100
nA
V
GS(th)
V
GS(th)
/
T
J
R
DS(ON)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= -250 μA
I
D
= -250 μA, Referenced to 25
o
C
-1
-1.5
-2
V
Gate Threshold Voltage Temp. Coefficient
3
mV/
o
C
Static Drain-Source On-Resistance
V
GS
= -10 V, I
D
= -1.5 A
0.11
0.125
T
J
=125°C
0.15
0.21
V
GS
= -4.5 V, I
D
= -1.2 A
V
GS
= -4.5 V, V
DS
= -5 V
V
DS
= -10 V, I
D
= -1.5 A
0.175
0.2
I
D(ON)
g
FS
DYNAMIC CHARACTERISTICS
On-State Drain Current
-5
A
Forward Transconductance
7
S
C
iss
C
oss
C
rss
SWITCHING CHARACTERISTICS
(Note 2)
Input Capacitance
V
= -10 V, V
GS
= 0 V,
f = 1.0 MHz
270
pF
Output Capacitance
150
pF
Reverse Transfer Capacitance
45
pF
t
D(on)
t
r
t
D(off)
t
f
Q
g
Q
gs
Q
gd
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Turn - On Delay Time
V
DD
= -15 V, I
D
= -1 A,
V
GS
= -10 V, R
GEN
= 6
8
16
ns
Turn - On Rise Time
7
14
ns
Turn - Off Delay Time
17
27
ns
Turn - Off Fall Time
10
1.8
ns
Total Gate Charge
V
DS
= -5 V, I
D
= -1.5 A,
V
GS
= -10 V
6.5
9.1
nC
Gate-Source Charge
1
nC
Gate-Drain Charge
1.1
nC
I
S
V
SD
Maximum Continuous Drain-Source Diode Forward Current
-0.42
A
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= -0.42 A
(Note 2)
-0.74
-1.2
V
Note:
1. R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
θ
JC
is guaranteed by
design while R
θ
CA
is determined by the user's board design.
Typical R
θ
JA
using the board layouts shown below on FR-4 PCB in a still air environment :
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
FDN358P Rev.D
a. 250
o
C/W when mounted on a
0.02 in
2
pad of 2oz Cu.
b. 270
o
C/W when mounted on
a 0.001 in
2
pad of 2oz Cu.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDN358P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SOT-23 |
| FDN358P_G | 制造商:Fairchild 功能描述:Single Pch, Logic Level, Power |
| FDN358P_Q | 功能描述:MOSFET SSOT-3 P-CH -30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDN358P-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDN358P Series 30V 125 mOhm Single P-Ch Logic Level PowerTrench Mosfet SSOT-3 |
| FDN359 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel Logic Level PowerTrenchTM MOSFET |
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