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参数资料
| 型号： | FDN359AN |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | N-Channel Logic Level PowerTrenchTM MOSFET |
| 中文描述： | 2700 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SUPERSOT-3 |
| 文件页数： | 5/8页 |
| 文件大小： | 264K |
| 代理商： | FDN359AN |
SSOT-3 Std Unit Orientation
Conductive Embossed
Carrier Tape
Customize Label
Antistatic Cover Tape
SSOT-3 Packaging
Configuration:
Figure 1.0
Components
Leader Tape
390mm minimum
Trailer Tape
160mm minimum
SSOT-23 Tape Leader and Trailer
Configuration:
Figure 2.0
Cover Tape
Carrier
Pin 1
Tape
Note/Comments
Packaging Option
SSOT-3 Std Packaging Information
Standard
(no flow code)
TNR
D87Z
Packaging type
Reel Size
7” Dia
TNR
13”
Qty per Reel/Tube/Bag
3,000
10,000
Box Dimension (mm)
187x107x183
343x343x64
Max qty per Box
9,000
20,000
Weight per unit (gm)
0.0097
0.0097
Weight per Reel (kg)
0.1230
0.4150
Human Readable Label
Human Readable Label sample
343mm x 342mm x 64mm
Intermediate box for D87Z Option
Human Readable
Label
187mm x 107mm x 183mm
Intermediate Box for Standard Option
3P
3P
3P
3P
Human Readable
Label
SuperSOT
TM
-3 Tape and Reel Data and Package Dimensions
December 1998, Rev. B
相关PDF资料 |
PDF描述 |
|---|---|
| FDN360 | Single P-Channel PowerTrenchTM MOSFET |
| FDN360P | Single P-Channel PowerTrenchTM MOSFET |
| FDN361BN | 30V N-Channel, Logic Level, PowerTrench MOSFET |
| FDN361 | N-Channel, Logic Level, PowerTrenchビヌ |
| FDN361AN | N-Channel, Logic Level, PowerTrenchビヌ |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDN359AN | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SOT-23 |
| FDN359AN-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDN359AN Series 30 V 0.046 Ohm N-Channel Logic Level PowerTrench Mosfet SSOT-3 |
| FDN359BN | 功能描述:MOSFET 30V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDN359BN"F095 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N CH 30V 0.026OHM 2.7A SUPER 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N CH, 30V, 0.026OHM, 2.7A, SUPER |
| FDN359BN_F095 | 功能描述:MOSFET 30V NCh; PowerTrench AU Wire Parts RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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