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参数资料
| 型号： | FDN361 |
| 厂商： | Fairchild Semiconductor Corporation |
| 英文描述： | N-Channel, Logic Level, PowerTrenchビヌ |
| 中文描述： | N沟道，逻辑层次，的PowerTrenchビヌ |
| 文件页数： | 1/8页 |
| 文件大小： | 946K |
| 代理商： | FDN361 |
F
FDN361AN, Rev. C
FDN361AN
N-Channel, Logic Level, PowerTrench
ΤΜ
General Description
This N-Channel Logic Level MOSFET is produced using
Fairchild Semiconductor's PowerTrench process that has
been especially tailored to minimize the on-state resistance
and yet maintain low gate charge for superior switching
performance.
April 1999
Features
1.8 A, 30 V. R
DS(on)
= 0.100
@ V
GS
= 10 V
R
DS(on)
= 0.150
@ V
GS
= 4.5 V.
Low gate charge ( 2.1nC typical ).
Fast switching speed.
High performance trench technology for extremely
low R
DS(on)
.
High power version of industry standard SOT-23
package. Identical pin out to SOT-23 with
30% higher power handling capability.
1998 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
Parameter
FDN361AN
30
±
20
1.8
8
0.5
0.46
-55 to +150
Units
V
V
A
Drain-Source Voltage
Gate-Source Voltage - Continuous
Drain Current
- Continuous
- Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1a)
P
D
W
T
J
, T
stg
Operating and Storage Junction Temperature Range
°
C
Thermal Characteristics
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
(Note 1a)
Thermal Resistance, Junction-to-Case
(Note 1)
250
75
°
C/W
°
C/W
Package Marking and Ordering Information
Device Marking
Device
361
FDN361AN
Reel Size
7
’’
Tape width
8mm
Quantity
3000 units
Applications
DC/DC converter
Load switch
Motor drives
D
S
G
G
D
S
SuperSOT -3
相关PDF资料 |
PDF描述 |
|---|---|
| FDN361AN | N-Channel, Logic Level, PowerTrenchビヌ |
| FDN371N | 30V N-Channel PowerTrench MOSFET |
| FDN372S | 30V N-Channel PowerTrench剖 SyncFET |
| FDN5618 | 60V P-Channel Logic Level PowerTrench MOSFET |
| FDN5618P | 60V P-Channel Logic Level PowerTrench MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDN361AN | 功能描述:MOSFET SSOT-3 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDN361AN | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SOT-23 |
| FDN361AN | 制造商:Fairchild Semiconductor Corporation 功能描述:Transistors MOSFET RoHS Compliant:Yes |
| FDN361BN | 功能描述:MOSFET 30V N-Ch LogicLevel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDN363N | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Fairchild Semiconductor Corporation 功能描述: |
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