参数资料
型号: FDN5618
厂商: Fairchild Semiconductor Corporation
英文描述: 60V P-Channel Logic Level PowerTrench MOSFET
中文描述: 60V的P通道MOSFET的逻辑电平的PowerTrench
文件页数: 1/8页
文件大小: 385K
代理商: FDN5618
July 2000
PRELIMINARY
2000 Fairchild Semiconductor Corporation
FDN5618P Rev B(W)
FDN5618P
60V P-Channel Logic Level PowerTrench
MOSFET
General Description
This 60V P-Channel MOSFET uses Fairchild’s high
voltage PowerTrench process. It has been optimized for
power management applications.
Applications
DC-DC converters
Load switch
Power management
Features
–1.25 A, –60 V.
R
DS(ON)
= 0.170
@ V
GS
= –10 V
R
DS(ON)
= 0.230
@ V
GS
= –4.5 V
Fast switching speed
High performance trench technology for extremely
low R
DS(ON)
G
D
S
SuperSOT -3
D
S
G
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current
– Continuous
– Pulsed
Maximum Power Dissipation
P
D
Ratings
–60
±
20
–1.25
–10
0.5
0.46
–55 to +150
Units
V
V
A
(Note 1a)
(Note 1a)
(Note 1b)
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
250
75
°
C/W
°
C/W
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
618
FDN5618P
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
F
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相关代理商/技术参数
参数描述
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FDN5618P 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SOT-23
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FDN5630 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET