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参数资料
| 型号： | FDN5618 |
| 厂商： | Fairchild Semiconductor Corporation |
| 英文描述： | 60V P-Channel Logic Level PowerTrench MOSFET |
| 中文描述： | 60V的P通道MOSFET的逻辑电平的PowerTrench |
| 文件页数： | 3/8页 |
| 文件大小： | 385K |
| 代理商： | FDN5618 |
FDN5618P Rev B(W)
Typical Characteristics
0
1
2
3
4
5
0
1
2
3
4
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
-4.5V
-6.0V
-2.5V
-4.0V
-3.5V
V
GS
= -10V
-3.0V
0.8
1
1.2
1.4
1.6
1.8
2
2.2
0
1
2
3
4
5
-I
D
, DRAIN CURRENT (A)
V
GS
= -3.0V
-4.0V
-10V
-4.5V
-6.0V
-3.5V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.8
0.9
1
1.1
1.2
1.3
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
I
D
= -1.25A
V
GS
= -10V
0.1
0.2
0.3
0.4
0.5
0.6
2
4
6
8
10
-V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
= -0.65 A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation
withTemperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
1
2
3
4
5
6
1
1.5
2
2.5
3
3.5
4
-V
GS
, GATE TO SOURCE VOLTAGE (V)
T
A
= 125
o
C
25
o
C
V
DS
= - 5V
-55
o
C
0.0001
0.001
0.01
0.1
1
10
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
F
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDN5618P | 功能描述:MOSFET SSOT-3 P-CH 60V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDN5618P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SOT-23 |
| FDN5618P-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDN5618P Series 60 V 0.170 Ohm P-Channel Logic Level PowerTrench Mosfet SSOT-3 |
| FDN5630 | 功能描述:MOSFET SSOT-3 N-CH 60V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDN5630 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
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