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参数资料
| 型号： | FDP047AN08 |
| 厂商： | Fairchild Semiconductor Corporation |
| 英文描述： | N-Channel UltraFET Trench MOSFET 75V, 80A, 4.7mз |
| 中文描述： | N沟道UltraFET沟道MOSFET 75V的，80A条，4.7mз |
| 文件页数： | 1/10页 |
| 文件大小： | 246K |
| 代理商： | FDP047AN08 |
2002 Fairchild Semiconductor Corporation
April 2002
FDP047AN08A0 Rev. A
F
FDP047AN08A0
N-Channel UltraFET
Trench MOSFET
75V, 80A, 4.7m
Features
r
DS(ON)
= 4.0m
(Typ.), V
GS
= 10V, I
D
= 80A
Q
g
(tot) = 92nC (Typ.), V
GS
= 10V
Low Miller Charge
Low Qrr Body Diode
UIS Capability (Single Pulse and Repetitive Pulse)
Qualified to AEC Q101
Formerly developmental type 82684
Applications
42V Automotive Load Control
Starter / Alternator Systems
Electronic Power Steering Systems
Electronic Valve Train Systems
DC-DC converters and Off-line UPS
Distributed Power Architectures and VRMs
Primary Switch for 24V and 48V systems
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
Symbol
V
DSS
V
GS
Parameter
Ratings
75
±
20
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
< 144
o
C, V
GS
= 10V)
Continuous (T
C
= 25
o
C, V
GS
= 10V, with R
θ
JA
= 62
o
C/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25
o
C
Operating and Storage Temperature
I
D
80
15
A
A
A
mJ
W
W/
o
C
o
C
Figure 4
600
310
2.0
-55 to 175
E
AS
P
D
T
J
, T
STG
R
θ
JC
R
θ
JA
Thermal Resistance Junction to Case TO-220
Thermal Resistance Junction to Ambient TO-220 (Note 2)
0.48
62
o
C/W
o
C/W
D
G
S
TO-220AB
FDP SERIES
DRAIN
(FLANGE)
DRAIN
GATE
SOURCE
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDP047AN08A0 | 功能描述:MOSFET 75V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDP047AN08A0 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO |
| FDP047AN08A0_F102 | 功能描述:MOSFET SNGL NCH 75V 4.7MOHM ULTRAFET TRENCH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDP047AN08A0_G | 制造商:Fairchild Semiconductor Corporation 功能描述:75V N-Channel PowerTrenchR MOSFET |
| FDP047N08 | 功能描述:MOSFET 75V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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